0[" ()dt电容元件的S域模型sSC(t)ic-"(0.)=ic(t)dtve()=(c)dt-ivc()+= vc(0_)Vc(s) =sS1c(s)+=vc(0_)sC-vc(0_)sC设L[ic(t)]= Ic(s),Ic(s)北L[vc(t)]= Vc(s)+ve(s)+第6页
第 6 页 电容元件的s域模型 ( ) ( ) ( ) ( ), L v t V s L i t I s C C C C 设 t C c i C v t ( )d 1 ( ) s i s I s C V s C C C 1 ( ) (0 ) ( ) ( 1) (0 ) ( )d 1 (0 ) 1 0 ( 1) C C C v i C i C (0 ) 1 ( ) 1 C C v s I s sC i t C v t C C sC 1 0 1 C v I s s C VC s s f s F s L f τ τ t ( ) (0 ) ( )d 1
七.卷积定理若L[f(t)]= F(s),L[f2(t)]= F2(s),fi(t),2(t)为有始信号L[f(t)* f2(t)= F(s)F2(s)1L[fi(t)· f2(t)]F(s) * F(s)=2元jfi(t)*f(t) <←一Fi(jo)F2(jo)1F(j@)*F2(jo)fi(t) f2(t) <—-2元第7页
第 7 页 七.卷积定理 ( ) ( ) ( ) ( ) 1 2 1 2 L f t f t F s F s ( ) ( ) 2 j 1 ( ) ( ) 1 2 1 2 L f t f t F s F s 若Lf 1 (t) F1 (s),Lf 2 (t) F2 (s),f 1 (t), f 2 (t)为有始信号 f1 (t)*f2 (t) ←→F1 (jω)F2 (jω) f1 (t) f2 (t) ←→ F1 (jω)*F2 (jω) 2 1