●●● ●●●● ●●●●● ●●●● lba的典型值 ●●●●● ●●●● ●●o● ● 晶体管数目（千个） IDDO平均值 i (nA) 70 0.4 1500 324 6000 980 17
17 IDDQ的典型值 晶体管数目（千个） IDDQ平均值（nA） 70 0.4 1500 324 6000 980
●●● ●● ●●●● ●●0● 10.2lba检测的缺陷及故障模型 18
18 10.2 IDDQ检测的缺陷及故障模型
●● 10.2.1桥接故障 ●●●● ●●●● .A defect is a physical occurrence in a semiconductor device. A fault is a defect manifestation. On average,one defect causes more than one fault. Bridging of a logic node to VDD or VSS Transistor gate oxide short of 1 KW to 5 KW to source 19
19 10.2.1 桥接故障 A defect is a physical occurrence in a semiconductor device. A fault is a defect manifestation. On average, one defect causes more than one fault. Bridging of a logic node to VDD or VSS Transistor gate oxide short of 1 KW to 5 KW to source
●●● ●●●● ●●●●● ●●●● 桥接故障 ●●●●0 ●●●● ●●o● ● (a) (b) 〔c) 〔d0 (e) 〔f)
20 桥接故障