In this lab session, the cantilever and fixed-fixed beams will be mechanically tested to determ material and device performance characteristics. The structures will be mechanically loaded the corresponding deflection measured. From the load versus deflection curves, an effective

MEMS LAB SESSION 2 Undercut Silicon Nitride using KOH Etching OVERVIEW OF LAB SESSION: This lab session utilizes potassium hydroxide(koh) wet etching to undercut and release the silicon nitride cantilevers and fixed-fixed beams. In Step

Massachusetts Institute of Technology POLY GATE MOSCAP PROCESS SUMMARY Lab session 1 1. 1 Lab Safety and Cleanroom Orientation 1.2 RCA ( ICL RC 1.3 Gate Oxidation Thermco Atmospheric Furnace(5D-FieldOx

Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections

This lab session will utilize photolithography and dry etching to transfer a pattern from a mask to a substrate. In Step 1. 1, the thickness and the refractive index of the silicon nitride film are measured. In Step

Rellablllty of semiconductor I CS plus spin-based electronics 6. 12J/3.155J Microelectronic processing Read Campbell, p. 425-428 and Ch. 20 Sec. 20.1, 20.2: Plummer, Sec. 11.5.6 IC reliability: Yield=( operating parts)/(total# produced) Particles on surface interrupt depositions, flaw devices

The mosfet structure Semiconductor Doping The mosfet as a switch A MOSFET Process The mos capacitor Process Recommended reading Plummer, Chapter 1 Fall 2003-MA schmidt

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

CRYSTAL GROWTH step Crystal and questlons 1. Reactants In molten form 2. Transport to s/L Interface TAS Increases AH decreases