We saw oⅴD Gas phase reactants: po l mTorr to l atm Good step coverage, T> 350 K We saw sputtering Noble (+ reactive gas)p 10 mTorr; ionized particles Industrial process high rate reasonable step coverage

How small would you like to go?...and can you go? with semiconductors?. with lithography 6.12J/3.155J Microelectronic processing Semiconductor scaling drivers: Speed of light in global interconnects, vac/vK Increased information density

Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP

Why do we need metallization?- To connect devices electrically to each other and to the outside world; power and data Local interconnect doped polySi, silicides Packaging

lasma enhanced surface diffusion without need for Dry etching Momentum transfer from plasma to remove surface species e We will see evaporation: Evaporate

Alternative materials and fabrication techniques Applications in biology and chemistry Applications in medicine A real MTL example of rapid prototyping

Closed book Covers lecture materials covered in problem sets through lithography Five questions, 20 pts. each a formula sheet will be provided a Sample quizzes from previous terms and the formula sheet are on the course web site Spring 2003 -Prepared by C. ross

The lithographic Process a BasIc process Definitions Fundamentals of Exposure Exposure Systems Resists Advanced Lithography Recommended reading Plummer, chapter 5

We saw how dopants were introduced into a wafer by using diffusion (predepositionanddrive-in') This process is limited cannot exceed solid solubility of dopant -difficult to achieve light dopin Ion implantation is preferred because controlled, low or high dose can be

Doping and diffusion I Motivation Faster MOSFET requires Requires shallower source, drain Ar P* poly snorter channel