Deposition Techniques: Initial letter of the deposition material A BC D E G H I K LM N O E R S I L Y Y Z Key of Symbols *Cr-plated mod o Temn.(C for Vap.Press (forr) E-Bear Coil Basket Crucible e60 678211010 nBz.w RE.DC Alloys and wets Stranded Wis best 08 43 RE 3.7 ·300 RF 7 2.64 .、0 ninum Carbide 小1400 b2.36· -800F RE 0=27 m.2%Copp A12%Cu 640 2.82 RF,DC um Fluoride 1291 82.88410490700P Mo.W.Ta AIN >2200 s 326 卜1750F RF.RF-R um Oxide 3.97 ·150e RF-R mohom 2000 22 um.2%Silicon 640 260 1010 TIB-BN RF,DC 630 s6.68279345425p Mo."Ta Mo,Ta Mo.Ta BN.C.Al,O RF,DC 66 ·3006 Pt BN.AlO RF-R Toxk.Decomposes on W.n.09
Material Symbol MP (°C) S/D g/cm3 Temp.(°C) for Given Vap. Press. (Torr) Evaporation Techniques Sputter Comments 10-8 10-6 10-4 E-Beam Thermal Sources Boat Coil Basket Crucible Aluminum Al 660 2.70 677 821 1010 Ex TiB2 ,W W W TiB2 -BN, ZrB2 , BN RF, DC Alloys and wets. Stranded W is best. Aluminum Antimonide AlSb 1080 4.3 - - - - - - - - RF - Aluminum Arsenide AlAs 1600 3.7 - - ~ 1300 - - - - - RF - Aluminum Bromide AlBr3 97 2.64 - - ~ 50 - Mo - - Gr RF - Aluminum Carbide Al4C3 ~1400 D 2.36 - - ~ 800 F - - - - RF n = 2.7 Aluminum, 2% Copper Al2%Cu 640 2.82 - - - - - - - - RF, DC Wire feed and flash. Difficult from dual sources. Aluminum Fluoride AlF3 1291 S 2.88 410 490 700 P Mo, W, Ta - - Gr RF - Aluminum Nitride AlN >2200 S 3.26 - - ~1750 F - - - - RF, RF-R Decomposes. Reactive evap in 10-3 T N2 with glow discharge. Aluminum Oxide Al2O3 2072 3.97 - - 1550 Ex W - W - RF-R Sapphire excellent in E-beam; forms smooth, hard films. n = 1.66 Aluminum Phosphide AlP 2000 2.42 - - - - - - - - RF - Aluminum, 2% Silicon Al2%Si 640 2.69 - - 1010 - - - - TiB2 -BN RF, DC Wire feed and flash. Difficult from dual sources. Antimony Sb 630 S 6.68 279 345 425 P Mo,*** Ta*** Mo, Ta Mo, Ta BN, C, Al2O3 RF, DC Toxic. Evaporates well. Antimony Oxide Sb2O3 656 S 5.2 - - ~300 G Pt - Pt BN, Al2O3 RF-R Toxic. Decomposes on W. n = 2.09, Deposition Techniques: Initial letter of the deposition material A B C D E G H I K L M N O P R S T U V Y Z Key of Symbols * influenced by composition ** Cr-plated rod or strip ***All metals alumina coated C = carbon Gr = graphite Q = quartz Incl = Inconel VC = vitreous carbon SS = stainless steel Ex = excellent G = good F = fair P = poor S = sublimes D = decomposes RF = RF sputtering is effective RF-R = reactive RF sputter is effective DC = DC sputtering is effective DC-R = reactive DC sputtering is effective
|2.18.2.35 Antimony Selenide s0Se3611 Ta RF Stoichlometry variable. Antimony Sulfide SD2Sa 550 4.64 ··-200G Mo,Ta Mo.Ta Al2O3 No decomposition.n-3.19,4.06.4.3 Antmony Telluride 629 6.50 600 RF Decomposes over 750C. Arsenic As 817 s 5.73 107150210 c nes rapidly at low Arsenic Oxide 312 3.74 Arsenic Selenide As2Se3 -360 4.75 Al2O3. RF Arsenic Sulfide A32S3 300 3.43 -400F Mo A203,Q RF n=2.4.2.81.3.02 Arsenic Telluride As2Te3 362 Flash JVW5T.1973:10:748. Barium Ba 725 3.51 545627735F W.Ta,Mo w Metals RF ogea Barlum Chlonide BaCl, 963 3.92 650· Ta,Mo RF Preheat gently to outgas.n1.73 Barlum Fluoride BaF2 1355 s4.89 -7006 Mo RF n=1.47 Barium Oxide Bao 1918 5.72 -1300P Pt A203 RF,RF-R Decomposes slightly.n=1.98 Barlum Sulfide BaS 1200 4.25 1100 Mo RF n=2.16 Barlum Titanate BaTiO3 、 D6.02 、 Be 1278 1.85 710 8781000 E W.Ta Beo.C.VC RF,DC Berylium Carbide Be,C ≥2100 D1.90 Beryllum Chloride BeCl2 405 1.90 -150 RF Beryllum Fluoride BeF2 800 s1.99 -200G Toxic.n =c1.33 Beryllium Oxide 2530 3.01 1900 RF,RF-R Bismuth 年 271 9.80 330 410520Ex W.Mo.Ta w Al2Og.VC DC.RF Toxic vapor.Resistivity high.No shorting of baskets. Bismuth Fluoride BF3 727 s5.32 300 Gr RF n=1.74 Bismuth Oxide Bi203 8G0 8.55 -1400P Pt Pt RF,RF-R Toxic vapor.n=1.91 Bismuth Selenide Bi2Sea 710 D6.82 650G Gr,0 R Bismuth Sulfide BS3 685 D7.39 RF n=1.34,1.46 Bismuth Telluride B2Te3 573 7.7 600 W.Mo RF Bismuth Titanate B2T207 RF Sputter or co-evaporate from two sources in 102 Torr oxygen. Boron B 2300 2.34 1278 15481797 Ex C.vC Boron Carbide B4C 2350 2.52 2500 25802650Ex RF Similar to chromium. Boron Nitride BN 3000 2.25 1600 RF,RF-R
2.18, 2.35 Antimony Selenide Sb2Se3 611 - - - - - Ta - - C RF Stoichiometry variable. Antimony Sulfide Sb2S3 550 4.64 - - ~200 G Mo, Ta - Mo, Ta Al2O3 - No decomposition. n=3.19, 4.06, 4.3 Antimony Telluride Sb2Te3 629 6.50 - - 600 - - - - C RF Decomposes over 750°C. Arsenic As 817 S 5.73 107 150 210 P C - - Al2O3 , BeO, VC - Toxic. Sublimes rapidly at low temperature. Arsenic Oxide As2O3 312 3.74 - - - - - - - - - - Arsenic Selenide As2Se3 ~360 4.75 - - - - - - - Al2O3 , Q RF - Arsenic Sulfide As2S3 300 3.43 - - ~400 F Mo - - Al2O3 , Q RF n = 2.4, 2.81, 3.02 Arsenic Telluride As2Te3 362 - - - - - Flash - - - - JVST. 1973;10:748. Barium Ba 725 3.51 545 627 735 F W, Ta, Mo W W Metals RF Wets without alloying reacts with ceramics. Barium Chloride BaCl2 963 3.92 - - ~650 - Ta, Mo - - - RF Preheat gently to outgas. n = 1.73 Barium Fluoride BaF2 1355 S 4.89 - - ~700 G Mo - - - RF n = 1.47 Barium Oxide BaO 1918 5.72 - - ~1300 P Pt - Pt Al2O3 RF, RF-R Decomposes slightly. n = 1.98 Barium Sulfide BaS 1200 4.25 - - 1100 - Mo - - - RF n = 2.16 Barium Titanate BaTiO3 - D 6.02 - - - - - - - - RF Gives Ba. Co-evap. from 2 sources or sputter. n = 2.40 Beryllium Be 1278 1.85 710 878 1000 Ex W, Ta W W BeO, C, VC RF, DC Wets W/Mo/Ta. Powder and oxides toxic. Evaporates easily. Beryllium Carbide Be2C >2100 D 1.90 - - - - - - - - - - Beryllium Chloride BeCl2 405 1.90 - - ~150 - - - - - RF - Beryllium Fluoride BeF2 800 S 1.99 - - ~200 G - - - - - Toxic. n = <1.33 Beryllium Oxide BeO 2530 3.01 - - 1900 G - - W - RF, RF-R Toxic. No decomposition from Ebeam guns. n=1.72 Bismuth Bi 271 9.80 330 410 520 Ex W, Mo, Ta W W Al2O3 , VC DC, RF Toxic vapor. Resistivity high. No shorting of baskets. Bismuth Fluoride BiF3 727 S 5.32 - - ~300 - - - - Gr RF n = 1.74 Bismuth Oxide Bi2O3 860 8.55 - - ~1400 P Pt - Pt - RF, RF-R Toxic vapor. n = 1.91 Bismuth Selenide Bi2Se3 710 D 6.82 - - ~650 G - - - Gr, Q RF Co-evaporate from two sources or sputter. Bismuth Sulfide Bi2S3 685 D 7.39 - - - - - - - - RF n = 1.34, 1.46 Bismuth Telluride Bi2Te3 573 7.7 - - ~600 - W, Mo - - Gr, Q RF Co-evaporate from two sources or sputter. Bismuth Titanate Bi2Ti2O7 - D - - - - - - - - - RF Sputter or co-evaporate from two sources in 10-2 Torr oxygen. Boron B 2300 2.34 1278 1548 1797 Ex C - - C, VC RF Explodes with rapid cooling. Forms carbide with container. Boron Carbide B4C 2350 2.52 2500 2580 2650 Ex - - - - RF Similar to chromium. Boron Nitride BN ~3000 S 2.25 - - ~1600 P - - - - RF, RF-R Decomposes under sputtering; reactive preferred
Boron Oxide B.O3 -450 1.81 -1400G Pt Mo n=1.48 Boron Sulfide B2Sa 310 1.55 800 Gr RF Cadmium 321 8.64 64 120180p W.Mo.Ta W.Mo.Ta Al2Oa.Q DC,RF .Low Cadmium Antimonide CdaSba 456 6.92 Cadmium Arsenide CdaAs2 721 6.21 Cadmium Bromide CdBr2 567 5.19 -300 Cadmium Chioride 568 4.05 -400 CdF2 1100 6.64 500 RF n=1.56 Cadmlum lodide 387 5.67 小250 Cadmeum Odde Cao >1500 D6.95 -530 RF-R Discrocortionates ne 2.49 Cadmium Selenide Cdse 31350 s5.81 540G Mo,Ta A203.Q RF Evaporates easily.n2.4 Cadmium Sulfide CdS 1750 4.82 550 W.Mo.Ta RF rariable.n #251.253 CdTe 1121 5.85 450 W.Mo.Ta w W.Ta.Mo RF Ca 839 s1.54272357 459P w ALO3.Q Corrodes in air. Calcium Fluoride CaF2 1423 3.18 、 ~1100 W.Mo.Ta W.Mo.Ta w,Mo,Ta Q Rate control important.Preheat gently to outgas.n 1.43 Calcium Oxide Cao 2614 3.3 -1700 W.Mo RF,RF-R Calclum Silicate CaSiOa 1540 2.91 -G RF n=1.61.1.66 Calcium Sulide Cas D2.5 -1100- Mo RF Decomposes.n2.14 Calclum Ttanate CaTIO3 1975 4.101490 16001690P Calcium Tungstate Cawo4 6.06 RF n=1.92 Carbon 3652 s 1.8-2.1165718672137Ex Poor film adhesion. Cerium Ce 798 6.70 g70 150h380 W.Ta W.Ta B0. DC.RF CeF3 1460 6.16 900G W.Mo.Ta Mo.Ta RF Preheat gently to outgas.n~1.7 Cerium (lll)Oxide 1692 6.86 Cerium (IV)Oxide CeO2 2600 7.13189020002310G w RF,RF-R Very little decomoosition. Ceslum Cs 28 1.88 -16 2280 ss Cesium Bromide CsBr 636 3.04 -400 w RF n=1.70 Cesium Chlonide CsCl 645 3.99 500 w n=1.64 Cesium Fluoride 682 4.12 -500 RF n=1.48 Cesium Hydroxide CsOH 272 3.68 550 Pt Cesium lodide Csl 626 4.51 ..500 RF n=1.79
Boron Oxide B2O3 ~450 1.81 - - ~1400 G Pt, Mo - - - - n = 1.48 Boron Sulfide B2S3 310 1.55 - - 800 - - - - Gr RF - Cadmium Cd 321 8.64 64 120 180 P W, Mo, Ta - W, Mo, Ta Al2O3 , Q DC, RF Bad for vacuum systems. Low sticking coefficient. Cadmium Antimonide Cd3Sb2 456 6.92 - - - - - - - - - - Cadmium Arsenide Cd3As2 721 6.21 - - - - - - - Q RF - Cadmium Bromide CdBr2 567 5.19 - - ~300 - - - - - - - Cadmium Chloride CdCl2 568 4.05 - - ~400 - - - - - - - Cadmium Fluoride CdF2 1100 6.64 - - ~500 - - - - - RF n = 1.56 Cadmium Iodide CdI2 387 5.67 - - ~250 - - - - - - - Cadmium Oxide CdO >1500 D 6.95 - - ~530 - - - - - RF-R Disproportionates. n = 2.49 Cadmium Selenide CdSe >1350 S 5.81 - - 540 G Mo, Ta - - Al2O3 , Q RF Evaporates easily. n = 2.4 Cadmium Sulfide CdS 1750 S 4.82 - - 550 F W, Mo, Ta - W Al2O3 , Q RF Sticking coefficient affected by substrate temperature. Stoichiometry variable. n = 2.51, 2.53 Cadmium Telluride CdTe 1121 5.85 - - 450 - W, Mo, Ta W W, Ta, Mo - RF Stoichiometry depends on substrate temperature. n~ 2.6 Calcium Ca 839 S 1.54 272 357 459 P W W W Al2O3 , Q - Corrodes in air. Calcium Fluoride CaF2 1423 3.18 - - ~1100 - W, Mo, Ta W, Mo, Ta W, Mo, Ta Q RF Rate control important. Preheat gently to outgas. n = 1.43 Calcium Oxide CaO 2614 ~3.3 - - ~1700 - W, Mo - - ZrO2 RF, RF-R Forms volatile oxides with tungsten and molybdenum. n = 1.84 Calcium Silicate CaSiO3 1540 2.91 - - - G - - - Q RF n = 1.61, 1.66 Calcium Sulfide CaS - D 2.5 - - 1100 - Mo - - - RF Decomposes. n = 2.14 Calcium Titanate CaTiO3 1975 4.10 1490 1600 1690 P - - - - RF Disproportionates except in sputtering. n = 2.34 Calcium Tungstate CaWO4 - 6.06 - - - G W - - - RF n = 1.92 Carbon C ~3652 S 1.8-2.1 1657 1867 2137 Ex - - - - RF E-beam preferred. Arc evaporation. Poor film adhesion. Cerium Ce 798 ~6.70 970 1150 1380 G W, Ta W W, Ta Al2O3 , BeO, VC DC, RF - Cerium Fluoride CeF3 1460 6.16 - - ~900 G W, Mo, Ta - Mo, Ta - RF Preheat gently to outgas. n ~ 1.7 Cerium (III) Oxide Ce2O3 1692 6.86 - - - F W - - - - Alloys with source. Use 0.015"-0.020" tungsten boat. n = 1.95 Cerium (IV) Oxide CeO2 ~2600 7.13 1890 2000 2310 G W - - - RF, RF-R Very little decomposition. Cesium Cs 28 1.88 -16 22 80 - SS - - Q - - Cesium Bromide CsBr 636 3.04 - - ~400 - W - - - RF n = 1.70 Cesium Chloride CsCl 645 3.99 - - ~500 - W - - - RF n = 1.64 Cesium Fluoride CsF 682 4.12 - - ~500 - W - - - RF n = 1.48 Cesium Hydroxide CsOH 272 3.68 - - 550 - Pt - - - - - Cesium Iodide CsI 626 4.51 - - ~500 - W - - Pt, Q RF n = 1.79
Chiolote 2.9 -800· Mo.W RF n=1.33 Chromium 1857 s7.20 8379771157G RF,DC E0gteyadherentHghrates Chromium Boride CrB 2760(2) 6.17 RF.DC Chromium Bromide CrBr2 842 4.36 550 RF 1980 6.68 -2000F RF.DC Chromium Chloride 824 2.88 550 Fe.Iincl RF Chromium Oxide Cr203 2266 5.21 -2000G W.Mo RF,RF-R oportionates to lower oxides: reoxidizes at 600C in air.n2.55 Chromium Sillcide 5.5 RF,DC oie-sacon Cr-SiO 、 人 w DC.RF Flash. Cobalt Co 1495 8.98509901200Ex w.Nb Al203.BeO IDC.RF Alloys with refractory metals. Cobalt Bromide CoBr2 678 D4.91 、 400 Iincl RF Cobalt Chloride CoCk 724 D3.36 472 RF Cobalt Oxide 1795 6.45 、 DC-R.RF. Sputter preferred. Copper Cu 1083 8.92 727 857 1017e Mo Al2Og.Mo.Ta DC.RF Copper Chloride CuCI 430 4.14 -600 RF n=1.93 Copper Oxide Cu2O 1235 s 6.0 600G Ta DC-R,RF- n=2.71 Copper Sulfide Cu2S 1100 5.6 Cryollte 1000 2.91020h2601480 w.Mo.Ta w.Mo.TavC RE egengonsnreduceptang.Lne Dysprosium Dy 1412 8.55625750900G Ta RF.DC Dysprosium Fluoride DyF3 1360 s -800G Ta RF Dysproslum Oxide Dy203 2340 7.81 -1400 RF,RF-R Loses oxygen. Erblum 1529 s9.07 650775930G w.Ta DC,RF Erblum Fluorde ErF3 1350 750 IMo RF VsT1g85:A362320 Erbium Oxide E03 Infus. 8.64 .-1600 RF.RF-R Loses oxygen. Europlum Eu 822 s5.24280360480F w.Ta A203 RF,DC Low tantalum solubility. Europlum Fluoride EuF? 1380 6.50 950 o RE Europlum Oxide Eu203 7.42 1600G ir.Ta.W ThO2 RF,RF-R Loses oxygen.Films clear and hard. 5.75 RF Material S/D Temp.(C)for Given Evaporation Techniques Sputter Commen本 Vap.Press.(Torr)
Chiolote Na5Al3F14 - 2.9 - - ~800 - Mo, W - - - RF n = 1.33 Chromium Cr 1857 S 7.20 837 977 1157 G ** W W VC RF, DC Films very adherent. High rates possible. Chromium Boride CrB 2760(?) 6.17 - - - - - - - - RF, DC - Chromium Bromide CrBr2 842 4.36 - - 550 - Incl - - - RF - Chromium Carbide Cr3C2 1980 6.68 - - ~2000 F W - - - RF, DC - Chromium Chloride CrCl2 824 2.88 - - 550 - Fe, Incl - - - RF - Chromium Oxide Cr2O3 2266 5.21 - - ~2000 G W, Mo - W - RF, RF-R Disproportionates to lower oxides; reoxidizes at 600°C in air.n = 2.55 Chromium Silicide Cr3Si2 - 5.5 - - - - - - - - RF, DC - Chromium-Silicon Monoxide Cr-SiO - S * * * * G W - W - DC, RF Flash. Cobalt Co 1495 8.9 850 990 1200 Ex W, Nb - W Al2O3 , BeO DC, RF Alloys with refractory metals. Cobalt Bromide CoBr2 678 D 4.91 - - 400 - Incl - - - RF - Cobalt Chloride CoCl2 724 D 3.36 - - 472 - Incl - - - RF - Cobalt Oxide CoO 1795 6.45 - - - - - - - - DC-R, RFR Sputter preferred. Copper Cu 1083 8.92 727 857 1017 Ex Mo W W Al2O3 , Mo, Ta DC, RF Adhesion poor. Use interlayer (Cr). Evaporates using any source material. Copper Chloride CuCl 430 4.14 - - ~600 - - - - - RF n = 1.93 Copper Oxide Cu2O 1235 S 6.0 - - ~600 G Ta - - Al2O3 DC-R, RFR n = 2.71 Copper Sulfide Cu2S 1100 5.6 - - - - - - - - - - Cryolite Na3AlF6 1000 2.9 1020 1260 1480 Ex W, Mo, Ta - W, Mo, Ta VC RF Large chunks reduce spitting. Little decomposition. Dysprosium Dy 1412 8.55 625 750 900 G Ta - - - RF, DC - Dysprosium Fluoride DyF3 1360 S - - - ~800 G Ta - - - RF - Dysprosium Oxide Dy2O3 2340 7.81 - - ~1400 - Ir - - - RF, RF-R Loses oxygen. Erbium Er 1529 S 9.07 650 775 930 G W, Ta - - - DC, RF - Erbium Fluoride ErF3 1350 - - - ~750 - Mo - - - RF JVST. 1985;A3(6):2320. Erbium Oxide Er2O3 Infus. 8.64 - - ~1600 - Ir - - - RF, RF-R Loses oxygen. Europium Eu 822 S 5.24 280 360 480 F W, Ta - - Al2O3 RF, DC Low tantalum solubility. Europium Fluoride EuF2 1380 6.50 - - ~950 - Mo - - - RF - Europium Oxide Eu2O3 - 7.42 - - ~1600 G Ir, Ta, W - - ThO2 RF, RF-R Loses oxygen. Films clear and hard. Europium Sulfide EuS - 5.75 - - - G - - - - RF - Material Symbol MP (°C) S/D g/cm3 Temp.(°C) for Given Vap. Press. (Torr) Evaporation Techniques Sputter Comments
E-Beam Thermal Sources Boat C Basket Crucible 1313 7.90 760 900 1175 A203 RF.DC High tantalum solubility. Gadolinium Carbide 1500 RF Decomposes under sputtering. Gadolnium Oxide 2330 7.41 RF.RF-R Loses oxygen. 30 5.90 619 742 907 、 Alloys with refractory metals.UseE heam oun. Galllum Antimonide GaSb 710 5.6 W.Ta RF Flash evaporate. Gallium Arsenide GaAs 1238 5.3 w.Ta RF Flash evaporate. Galllum Nitride GaN 800 s 6.1 -200 AM203 RF.RF-R Evaporates gallilum in 10-3 Tomr nitrogen. Galllum Oxide Ga203 1900 6.44 Pr.W RF Loses oxygen.n 1.92 Galllum Phosphide GaP 1540 770. 920 W.Ta 6 Does not decompose.Rate control Germanlum Ge 937 5.35 812 9571167 Ex w.C.Ta DC.RF Excellent films from E-beam guns. Germanium Nitride 450 s 5.2 -650 RF-R Sputtering preferred. Germanium (ln Oxide Geo 710 500 RF n=161 Germanium (lll)Oxide Geo. 1086 624 -625G Ta,Mo W.Mo Q.Al2O3 RF-R Simlar to SiO:tim predominantly GeO. Germanium Telluride GeTe 725 6.20 381 W.Mo w RF Glass.Schott 8329 2.20 Ex 、 RF adihgasaMenat Gold 1064 19.32807 947 1132 w WMo*+ Al2O3.BN. vc w DC.RF,Films soft,not very adherent. H 2227 13.312160 22503090 DC.RF Hafnium Boride HrB2 3250 10.5 DC.RF Hafnium Carbide HIC -3890 s 12.20 -2600 DC.RE Hatnium Nitride HIN 3305 RF.RF-R Hafnium Oxide 2758 9.68 2500 CR际R Film HfO. 1750 72 RF Ho 1474 8.B0 650 770 950 G W.Ta Holmium Fluoride HoF3 1143 -800 DC.RF Holmium Oide Ho203 2370 8.41 ir RF.RF-R Loses oxygen. Ni/CrFe 1425 8.5 G DC.RF Use fine wire wrapped on tungsten.Low rate requred for smooth films. indium in 151 7.30 487 597 742 W.Mo Gr.ALO3 DC.RF ndium Antimonide InSb 535 5.8 RF Indium Arsenide InAs 943 5.7 780 870 970 RF indium Nitride InN 1200 7.0
10-8 10-6 10-4 E-Beam Thermal Sources Boat Coil Basket Crucible Gadolinium Gd 1313 7.90 760 900 1175 Ex Ta - - Al2O3 RF, DC High tantalum solubility. Gadolinium Carbide GdC2 - - - - 1500 - - - - C RF Decomposes under sputtering. Gadolinium Oxide Gd2O3 2330 7.41 - - - F Ir - - - RF, RF-R Loses oxygen. Gallium Ga 30 5.90 619 742 907 G - - - Al2O3 , BeO, Q - Alloys with refractory metals. Use Ebeam gun. Gallium Antimonide GaSb 710 5.6 - - - F W, Ta - - - RF Flash evaporate. Gallium Arsenide GaAs 1238 5.3 - - - G W, Ta - - C RF Flash evaporate. Gallium Nitride GaN 800 S 6.1 - - ~200 - - - - Al2O3 RF, RF-R Evaporates gallium in 10-3 Torr nitrogen. Gallium Oxide Ga2O3 1900 6.44 - - - - Pr, W - - - RF Loses oxygen. n = 1.92 Gallium Phosphide GaP 1540 4.1 - 770 920 - W, Ta - W Q RF Does not decompose. Rate control important. Germanium Ge 937 5.35 812 957 1167 Ex W, C, Ta - - Q, Al2O3 DC, RF Excellent films from E-beam guns. Germanium Nitride Ge3N2 450 S 5.2 - - ~650 - - - - - RF-R Sputtering preferred. Germanium (II) Oxide GeO 710 S - - - 500 - - - - Q RF n = 1.61 Germanium (III) Oxide GeO2 1086 6.24 - - ~625 G Ta, Mo - W, Mo Q, Al2O3 RF-R Similar to SiO; film predominantly GeO. Germanium Telluride GeTe 725 6.20 - - 381 - W, Mo - W Q, Al2O3 RF - Glass, Schott 8329 - - 2.20 - - - Ex - - - - RF Evaporable alkali glass. Melt in air before evaporating. Gold Au 1064 19.32 807 947 1132 Ex W W W*** Mo*** Al2O3 , BN, VC W DC, RF, Films soft, not very adherent. Hafnium Hf 2227 13.31 2160 2250 3090 G - - - - DC, RF - Hafnium Boride HfB2 3250 10.5 - - - - - - - - DC, RF - Hafnium Carbide HfC ~3890 S 12.20 - - ~2600 - - - - - DC, RF - Hafnium Nitride HfN 3305 - - - - - - - - - RF, RF-R - Hafnium Oxide HfO2 2758 9.68 - - ~2500 F W - - - DC, RF, RFR Film HfO. Hafnium Silicide HfSi2 1750 7.2 - - - - - - - - RF - Holmium Ho 1474 8.80 650 770 950 G W, Ta W W - - - Holmium Fluoride HoF3 1143 - - - ~800 - - - - Q DC, RF - Holmium Oxide Ho2O3 2370 8.41 - - - - Ir - - - RF, RF-R Loses oxygen. Inconel Ni/Cr/Fe 1425 8.5 - - - G W W W - DC, RF Use fine wire wrapped on tungsten. Low rate required for smooth films. Indium In 157 7.30 487 597 742 Ex W, Mo - W Gr, Al2O3 DC, RF Wets tungsten and copper. Use molybdenum liner. Indium Antimonide InSb 535 5.8 - - - - W - - - RF Decomposes; sputter preferred; or coevaporate Indium Arsenide InAs 943 5.7 780 870 970 - W - - - RF - Indium Nitride InN 1200 7.0 - - - - - - - - - -