SOL校准（单端口校准）反射参数测量miaS11M-ED1S11A=Es(S1M-ED)+ERTS11AS11MED_EsERTbmi三个变量（复数变量），需要三个方程常用校准件：-shortPort1的Ep，Es，ERT-openPort2的E'D,E's,E'RT-load
校准方法：单端口SOL误差模型：三项误差模型器件：负载-20失网校准谢试结果程序校准结果1失网未校准测试结果-30(Op)S-40-50-608.59.51010.511.512911频率（GHz)200100(O0AHLIS0-100-2009.5101111.588.510.512:频率（GHz)
校准方法：单端口SOL 误差模型：三项误差模型 器件：负载
双端口误差模型（1）：突然画风变复杂，但是原理差不多8相误差模型DUT[TXOb,bm2amlaie10S21e32S11S22e33eooe1le22S12e01e23b1bm1am2azXDUT单端口反射参数测量误差模型r.EEsSECC1
双端口误差模型（1）：突然画风变复杂，但是原理差不多
双端口误差模型（2）：考虑设备本身的串扰100um16（15）相误差模型a.oe10DUT若只考虑e03和e30是10相误差模型b.oS11S21Se12S2eo.e3s Directivitya.e11.e22PortMatche1o.e01,e32,23Trackinge3o.eos Primary LeakageAllothersarelowerlevelbaleakagepaths
双端口误差模型（2）：考虑设备本身的串扰
例：串扰对测试结果的影响-10(ap)sredsCalibrated S.8P.... Calibrated S,..Calibrated S.Calibrated S,-4050-60707580859095100105110Frequency (GHz)10OSimulation10-term SOLT correction (this paper)-7.5-10-12-temSOLTcorrection (off-wafer)*12-tem SOLT correction (on-wafer)-20(AP)-8-SOLRcorrection(on-wafer)-3016-term correction using SVD metho-8.5soapnruen-400-50-9.5-601Measured S-70-10Measured S-80.....-Simulated S,AE-10.50000006-90...-.Simulated S..-11-1001401501601701801902002102207585909580100105110Frequency (GHz)Frequncy/GHz
例：串扰对测试结果的影响