ACS Publications 9 High quality High impact. a .MB in H2O b SiO2-MB -Si02 400 500600700 800 Wavelength(nm) d e Nitrogen map Silicon map Characterizations of Si02-MB NPs.(a)Typical TEM image of the Si02-MB NPs.(b) Absorption spectra taken from pure MB,Si02-MB NPs,and pure Si02 NPs in aqueous solutions.(c)Filtered bright-field TEM image of single NP and the corresponding EELS maps of (d)nitrogen and (e)silicon.The scale bar is 20 nm. Published in:Silu Zhang:Zhiqin Chu:Chun Yin:Chunyuan Zhang:Ge Lin;Quan Li;/.Am.Chem.Soc.2013,135,5709-5716. D0I:10.1021/ia3123015 Copyright2013 American Chemical Society
Characterizations of SiO2-MB NPs. (a) Typical TEM image of the SiO2-MB NPs. (b) Absorption spectra taken from pure MB, SiO2-MB NPs, and pure SiO2 NPs in aqueous solutions. (c) Filtered bright-field TEM image of single NP and the corresponding EELS maps of (d) nitrogen and (e) silicon. The scale bar is 20 nm. Published in: Silu Zhang; Zhiqin Chu; Chun Yin; Chunyuan Zhang; Ge Lin; Quan Li; J. Am. Chem. Soc. 2013, 135, 5709-5716. DOI: 10.1021/ja3123015 Copyright © 2013 American Chemical Society
ACS Publications High quality.High impact. 100 60 is pope IS 40 20 20 -Deionized Water .-pH7.4 PBS .-Simulated body fluid 24601246 680 e Time (days) Time(days) Time(days) Carrier decomposition of Si02-MB NPs.Typical TEM images of the Si02-MB NPs after being immersed in deionized water for (a)1,(b)4,(c)9,and (d)14 days,respectively.The scale bar is 100 nm.ICP-OES result of degraded silicon amount as a function of immersion duration in (e)deionized water at room temperature,(f)PBS (pH 7.4),and (g)simulated body fluid (with 50%FBS)at 37C. Published in:Silu Zhang:Zhiqin Chu:Chun Yin:Chunyuan Zhang:Ge Lin:Quan Li:Am.Chem.Soc.2013,135,5709-5716. D0I:10.1021/ja3123015 Copyright o 2013 American Chemical Society
Carrier decomposition of SiO2-MB NPs. Typical TEM images of the SiO2-MB NPs after being immersed in deionized water for (a) 1, (b) 4, (c) 9, and (d) 14 days, respectively. The scale bar is 100 nm. ICP-OES result of degraded silicon amount as a function of immersion duration in (e) deionized water at room temperature, (f) PBS (pH 7.4), and (g) simulated body fluid (with 50% FBS) at 37 °C. Published in: Silu Zhang; Zhiqin Chu; Chun Yin; Chunyuan Zhang; Ge Lin; Quan Li; J. Am. Chem. Soc. 2013, 135, 5709-5716. DOI: 10.1021/ja3123015 Copyright © 2013 American Chemical Society
电子显微镜 光学显微镜 媒体 电灯 故出湖 电子枪 电子束加速 光线 困 电子束 用高压电源 玻璃 透镜 聚光镜 电子透镜一 置于玻璃 样品 置于火棉 透镜电 载片上 胶膜上 (空气中) (真空中) 玻璃透镜 物镜 电子透镜 透镜电源 分辨率： 空气中 通贸 真空中 n人眼：0.2 玻璃透镜投彤镜 电子透镜 (目镜) mm 直接观 电子束打在荧光屏 透镜电源 上变换成肉眼 n 光学显微镜： 可见的光学像 照相底片 照相底片 直空泵 0.2um (空气中) 记录灵 (真空中) n电子显微镜： 图3-1光学显微镜与透射电镜结构比较示意图 0.1nm 3
3 分辨率： n 人眼：0.2 mm n 光学显微镜： 0.2 μm n 电子显微镜： 0.1 nm
第四章电子显微分析之一 透射电子显微分析 第一节电子与固体作用产生的信号p43-46 第二节工作原理及构造*p136p142 第三节样品制备p145148 第四节基本成像操作及相衬度*p149151 第五节典型应用*及其他功能简介p1551614
4 第四章 电子显微分析 之一 透射电子显微分析 第一节 电子与固体作用产生的信号p43-46 第二节 工作原理及构造*p136~p142 第三节 样品制备p145~148 第四节 基本成像操作及相衬度*p149~151 第五节典型应用*及其他功能简介p155~161
X射线衍射仪 电子探针仪 扫描电镜 X射线 次电子 韧致辐射 入射电子 背散射电子 阴极荧光 吸收电子 俄歇电子 试样 透射电子 衍射电子 俄歇电镜 透射电子显微镜 电子衍射仪
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