Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections

This lab session will utilize photolithography and dry etching to transfer a pattern from a mask to a substrate. In Step 1. 1, the thickness and the refractive index of the silicon nitride film are measured. In Step

Rellablllty of semiconductor I CS plus spin-based electronics 6. 12J/3.155J Microelectronic processing Read Campbell, p. 425-428 and Ch. 20 Sec. 20.1, 20.2: Plummer, Sec. 11.5.6 IC reliability: Yield=( operating parts)/(total# produced) Particles on surface interrupt depositions, flaw devices

The mosfet structure Semiconductor Doping The mosfet as a switch A MOSFET Process The mos capacitor Process Recommended reading Plummer, Chapter 1 Fall 2003-MA schmidt

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

Outline Introductions Staff You Motivation Course organization Handout a Lab assignments Safety M.A. Schmidt

CRYSTAL GROWTH step Crystal and questlons 1. Reactants In molten form 2. Transport to s/L Interface TAS Increases AH decreases

We saw oⅴD Gas phase reactants: po l mTorr to l atm Good step coverage, T> 350 K We saw sputtering Noble (+ reactive gas)p 10 mTorr; ionized particles Industrial process high rate reasonable step coverage

How small would you like to go?...and can you go? with semiconductors?. with lithography 6.12J/3.155J Microelectronic processing Semiconductor scaling drivers: Speed of light in global interconnects, vac/vK Increased information density

Covers materials in lectures from 10/15 through 11/26 Does not include Lab Lectures A formula sheet will be provided (if needed) Lecture on Monday, Dec. 8th Lab tour of Analog Devices MEMS Facility We will leave from the classroom at 2: 35PM SHARP