3155/6.,152] Lecture2 IC Lab overview Prof martin a schmidt Massachusetts Institute of Technology 9/8/2003
3.155J/6.152J Lecture 2: IC Lab Overview Prof. Martin A. Schmidt Massachusetts Institute of Technology 9/8/2003
Outline The mosfet structure Semiconductor Doping The mosfet as a switch A MOSFET Process The Mos capacitor Process Recommended reading Plummer, Chapter 1 Fall 2003-MA schmidt 3. 155J 6.152]-Lecture 2-Slide 2
Outline The MOSFET Structure Semiconductor Doping The MOSFET as a Switch A MOSFET Process The MOS Capacitor Process Recommended reading Plummer, Chapter 1 Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 2 – Slide 2
MOSFET D Gate G Oxide Source Drain Bulk Fall 2003-MA schmidt 3. 155J 6.152]-Lecture 2-Slide 3
MOSFET G Source Drain Oxide Gate Bulk S D D G S Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 2 – Slide 3
N-Channel mosfet OV D Gate Oxide n-type n-type p-type Fall 2003-MA schmidt 3. 155J 6.152]-Lecture 2-Slide 4
N-Channel MOSFET +VG n-type n-type Oxide Gate p-type 0 V +V D Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 2 – Slide 4
A Word about Doping Silicon has four valence electrons It covalently bonds with 4 adjacent atoms in the crystal lattice si):(Si)°(Si):(si)。(Si):(Si):(Si)°(si):(Si s):③:(::(:③:(:(s:③° 9:(:○::③⑨:(:③: ③::③:(::(:(:(:( s):():):(s):(s):(s):(S):(S):(i Fall 2003-MA schmidt 3. 155J 6. 152]-Lecture 2-Slide 5
A Word About Doping…. Silicon has four valence electrons It covalently bonds with 4 adjacent atoms in the crystal lattice Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 2 – Slide 5