Synthesis methods Atmosphere Multi-Agent Solution Substrate Vacuum Source COMPLEX
Synthesis methods COMPLEX
PVD and GLAD Physical Vapor Deposition Glancing Angle Deposition Substrate Electron Beam Electron Beam Magnetic Field 0 o ao o Magnetic Field H20 H20 H,O H20 Earth Earth Ground Ground 1959 Metallic Nanorods realized from PVD Diffusion distance of metals at room temperature microns Even GLAD should form dense films Nanorod growth is not understood
Physical Vapor Deposition PVD and GLAD Glancing Angle Deposition 1959 Metallic Nanorods realized from PVD Diffusion distance of metals at room temperature = microns Even GLAD should form dense films Nanorod growth is not understood
Three modes of epitaxial crystal growth Monolayer steps with Multi-layer steps with 3D ES conventional 2D ES barrier barrier result in nanorods result in islands with lateral diameter of~100 nm,or even dimension over 1000 nm smaller ~10 nm. H.C.Huang,JOM64,1253(2012)
Three modes of epitaxial crystal growth H. C. Huang, JOM 64, 1253 (2012) Monolayer steps with conventional 2D ES barrier result in islands with lateral dimension over 1000 nm Multi-layer steps with 3D ES barrier result in nanorods diameter of ~100 nm, or even smaller ~10 nm
Three dimensional ES barrier Atom moving Terrace on terrace 3a88 Terrace 0.0 白◆ Kink Step 0.1 -0.2 ...Monolayer (16 images) -0.3 -Monolayer (8 images) Atom moving ×-Two-layer (8 images) -0.4 acmoss Three-layer (8 images) a 3-D ES barrier -0.5 -Four-layer (8 images) ● Atom moving across a 1-D ES barer -0.6 Atom moving across (island corner barrer 0.0 0.2 0.4 0.6 0.8 1.0 a 2-D ES barrier Reaction Coordinate Contrast:0.06 ev,0.16 ev,0.40 ev. M.G.Lagally and Z.Y.Zhang,Nature,417,907(2002) S.K.Xiang and H.C.Huang,Appl.Phys.Lett.92,101923(2008)
Contrast: 0.06 eV, 0.16 eV, & 0.40 eV. Three dimensional ES barrier M. G. Lagally and Z. Y. Zhang, Nature, 417, 907 (2002) S. K. Xiang and H. C. Huang, Appl. Phys. Lett. 92, 101923 (2008)
Three dimensional ES barrier E3D-0.16eV 20000000-￥ 000000-￥4 0000000000000000-￥k+2 0000000000000000000000000000000 R.L.Schwoebel and E.J.Shipsey,J. Appl.Phys.37,3682(1966) 20 45 90X ◆E2p-0.26eV das 15 -E2n0.16eV 一 E2-0.06eV 35 E3D-0.40 eV 10 30 25 20 15 0. 0.2 0.3 0.4 0.5 E3(ev)
Three dimensional ES barrier E3D=0.16 eV R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys. 37, 3682 (1966) E3D=0.40 eV