Examples of MCMC:Reaction-Diffusion (R-D)model >Defect-induced threshold voltage shift/instability (VT)has been a reliability issue in metal-oxide-semiconductor (MOS)transistors > Interface defects are generally assumed to arise from the dissociation of interfacial Si-H bonds at the silicon/dielectric interface The dissociation of Si-H bond during the defect creation The repassivation of broken Si-bonds during the defect annealing H diffusion H2 diffusion and H-H2 inter-conversion
Examples of MCMC: Reaction-Diffusion (R-D) model Defect-induced threshold voltage shift/instability (VT) has been a reliability issue in metal-oxide-semiconductor (MOS) transistors Interface defects are generally assumed to arise from the dissociation of interfacial Si-H bonds at the silicon/dielectric interface The dissociation of Si-H bond during the defect creation The repassivation of broken Si-bonds during the defect annealing H diffusion H2 diffusion and H-H2 inter-conversion
Examples of MCMC:Reaction-Diffusion(R-D)model dN=kp(No-Nr)-kgNnNn dt dNB=Du dx H dt =D, dt
Examples of MCMC: Reaction-Diffusion (R-D) model
Examples of MCMC:Reaction-Diffusion(R-D)model 1-Pr 1-PDH-PR 1-PDH PDH No-NIT NH2 。。。有。金象金有象非e参东e表。象 PR PDH PDH Nr Markov model for probabilistic motion in an R-D system having H diffusion
Examples of MCMC: Reaction-Diffusion (R-D) model
Examples of MCMC:Reaction-Diffusion(R-D)model =DH dt dN dz NL-kn[N9]'+冰N2, /入(0) H dt DH2 g[了-g d dNDH dt dNn-kn Ni+knaNnz dN2=DH2 dz? dt divaoWe
Examples of MCMC: Reaction-Diffusion (R-D) model
Examples of MCMC:Reaction-Diffusion(R-D)model 1-PDH-1-2pDH 1-2PpH 1-Pr PR-PH -PH -PH Pe PDH PDH No-NIT NH2 Nr 0.5PH PH2 0.5PH PH2 0.5PH PH2 N2° N:2 .( 1-PoH2-1-2Po2 1-2PDH2 0.5pz -0.5PH2 -0.5p2 Markov model for probabilistic motion in an R-D system having H-H2 diffusion
Examples of MCMC: Reaction-Diffusion (R-D) model