IC封装设计 Assembly Design Rule:SMT,DA,WB,Mold. Flp Chip Flp Chip CSP Glop TOP 由由口口凸口 山卤由卤由白 G B CSP Flip Chip Board (TOP) Board (BTM) Flip Chp 0 Flp Chip Flp Chp E Shielding Box D B
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IC封装设计 Substrate Design Rule:Trace width,Spacing D3 D5 D1 =Min.drill bit size (multi-layer) D1 D2=Min.Blind via drill size D2 D3=Min.Via land diameter (outer layer) D4 Min.Vial land diameter (inner layer) D5-Min.blind via land diameter D6 D6=Min.blind Via Capture Pad diameter D7-Min.Via clearance (inner layer) Tc=Min.core thickness To=min.Dielectric layer thickness TsM-Solder mask Thickness Toc=Outer layer copper thickness Tic-Inner layer copper Thickness TsM Toc TL=Min.Total laminate thickness Mass Production Prototype* P.S.*If you would like to 100μm 100μm choose this type,the 100m 85μm price is increased. 8888888138 230μm 230μm 300μm(DR+200) 250m(DR+150) 200m(DR+100) 190m(DR+100 250Jm(DR+150) 220μm(DR+130) 350μm(DR+250) 350μm (DR+250) 50μm(min.) 40μm 100 um (max.for Blind hole) 60m 15 um (min) 10 m 12μm(min) 10m Ni Thickness min.4 um 12 um (Typ.) 12m 260±40um 260±40 um Au min.0.5 um
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IC封装设计 Sip封装设计： 规则驱动设计 作 cadence D合▣◆0装y+地上0★回四久气发Q父⊙日A的0”遇J效0■【品 国回国图圆#德野图始代风么A”屋&回 租同道图可 DUM 0名 口.1w习 3☒ Wieen :.。出isetn Coltan Wo ouyzs a山tTo1dwH时e cadence -s x D的「 习DDn西您B#可 e快 型UN 5见4N HaxLong 4500dhg#s韩 83m0f41Br3网 F0a幅 2 gw川 ■山w5 oed mlecson feern Pre-dsled Sotsnor Guo 7 0 5得 4r+rI1:. 可■ D
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IC封装设计 能为您提供的设计：BGA,LGA,Sip… SiP Module Packaging Structure Type Side-by-Side mn Packaging eew●●ee● ■■甲■■罗厚甲号甲明物眼 Wire Bonding Type Flip Chip Type 3D U00 0 U UU packaging W/B Type W/B+FC Type PiP,PoP,Cavity and more Embedded Packaging Embedded Active Embedded IPD Embedded Passives
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IC封装设计 设计实例：LGA(SMT+FC) 050 WIFI PA *92 FlipChip
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