《Microelectronics Process》lecture6

3155/6.,152] Lecture6: IC Lab Testing Prof martin a schmidt Massachusetts Institute of Technology 9/24/2003

3.155J/6.152J Lecture 6: IC Lab Testing Prof. Martin A. Schmidt Massachusetts Institute of Technology 9/24/2003

Outline Review of process Structures to be tested Sheet resistance MOS Capacitor Fall 2003-MA schmidt 3. 155J 6.152]-Lecture 6-Slide 2

Outline „ Review of Process „ Structures to be Tested „ Sheet Resistance „ MOS Capacitor Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 6 – Slide 2

Our process Polysilicon gate(n-type )MOS Capacitor n-type substrate 250nm n-type polysilicon gate 50nm gate oxide Various size capacitors Polysilicon sheet resistivity monitor Fall 2003-MA schmidt 3. 155J 6.152]-Lecture 6-Slide 3

Our Process „ Polysilicon Gate (n-type) MOS Capacitor „ n-type substrate „ 250nm n-type polysilicon gate „ 50nm gate oxide „ Various size capacitors „ Polysilicon sheet resistivity monitor Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 6 – Slide 3

Resistance 工 R=pL/A=(p/t(L/W Resistivity Process Mask Q-cm Fall 2003-MA schmidt 3. 155J 6.152]-Lecture 6-Slide 4

Resistance W L t R = ρ L/A = (ρ/t) (L/W) Resistivity Process Mask Ω-cm Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 6 – Slide 4

Concept of sheet resistivity R=pl/A=(p/t(L/W Sheet Resistivity(rs) of Squares Q2/sq R Fall 2003-MA schmidt 3. 155J 6. 152]-Lecture 6-Slide 5

Concept of Sheet Resistivity R = ρ L/A = ( ρ/t) (L/W) Sheet Resistivity (R S) # of Squares Ω/sq L = W R = R S Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 6 – Slide 5