●●● ●●● 2.Oscillator Using a Common Emitter BJT ●●●● ●●0 ●●●● 9+7 ● 放大器 放大器 回授網路 回授網路 C 考畢子振渴器 哈特萊振盪器 Colpitts oscillator考比兹振荡器 Hartley oscillator 8m 哈特莱振荡器 2 C Gi 00三1 1 8m C;(L+L2) L2 12
2. Oscillator Using a Common Emitter BJT Colpitts oscillator考比兹振荡器 ( ) 1 1 2 1 2 3 0 C C C C L Hartley oscillator 哈特莱振荡器 ( ) 1 3 1 2 0 C L L 12
●●● ●●●● 3.Practical Colpitts oscillator ●●●●● ●●●0 ●●●● Colpitts oscillator C C=1+RG L: w=2(后+。+)-宏（白+）七1d Condition of oscillation is 1+8m/G:_L3 o听C1C2 (Stable State) Extend: 行→ 1 +8m/Gi L3 6C1C2 L ①Shunt LC (Start up oscillation) CR(coaxial resonator同轴振荡器)with high Q=1000~3000, Q个，frequency stability↑，phase noise↓ 13
3. Practical Colpitts oscillator Extend: ① Shunt LC CR (coaxial resonator同轴振荡器) with high Q =1000~3000, Q , frequency stability , phase noise Colpitts oscillator Condition of oscillation is L3 L3 R C1 C2 C1 C2 13 (Stable State) (Start up oscillation)
●●●】 ●●●● ●●●● ●●●0 ●●●● ②VCO 压控振荡器 ●●●● ●● Used for phase-lock ③VCDRO ↑Frequency stability,,↓phase noise e DR:dielectric resonator 介质谐振器 I DR 14
②VCO 压控振荡器 Used for phase-lock ③VCDRO Frequency stability, phase noise DR：dielectric resonator 介质谐振器 14
④Crystal Oscillator 0,<0<0p High unload（无载品质因数) Qs:100,000 OXCO (恒温晶振) as high Q feedback network反馈网络 TXCO (温补晶振) Feature of crystal oscillator:=1GHz, frequency stability <1PPM, phase noise -178dBc/Hz@10kHz. 15
0 0 1 1 ( ) s p s p LC C C L C C High unload（无载品质因数） Qs: 100,000 as high Q feedback network反馈网络 ④Crystal Oscillator OXCO（恒温晶振） TXCO （温补晶振） Feature of crystal oscillator: f0=1GHz, frequency stability <1PPM, phase noise -178dBc/Hz@10kHz. 15
●●● ●●●● ●●●● ●●●● S 8.2 Microwave Oscillators ●●●● ●●●● It is difference from the techniques used at lower RF frequency,从技术上讲它和低频段不同 >transistor characteristics,晶体管特性 >circuit layout method,电路结构 test equipment(S parameter,rather than voltage or current).测试设备(S参数，而不是电压或电流) For the stability of amplifier:nK1,and rou1 放大器的稳定性 For oscillator:1,or ro>1 16
§8.2 Microwave Oscillators It is difference from the techniques used at lower RF frequency,从技术上讲它和低频段不同 transistor characteristics, 晶体管特性 circuit layout method,电路结构 test equipment (S parameter, rather than voltage or current). 测试设备（S参数，而不是电压或电流） For the stability of amplifier: 放大器的稳定性 | | 1, | | 1 in out and | | 1, | | 1 in out For oscillator: or 16