Pattern Transfer Steps Coat with photoresist pose Mask ++t Develop Etch Strip resist Wet etch Fall 2003-MA Schmidt 3.155]6.152]-Lecture 10-Slide 6
Pattern Transfer Steps Mask Coat with photoresist Develop Strip resist Expose Etch* *Wet etch Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 10 – Slide 6
Definitions Metrics Resolution Throughtput Registration(Alignment) Exposure Systems-UV Projection -Fraunhofer Proximity-Fresnel Contact -Fresnel Advanced DUV, E-Beam, X-Ray, Nano-imprint Resists a Positive/Negative Contrast CMTE Fall 2003-MA Schmidt 3. 155] 6. 152]-Lecture 10-Slide 7
Definitions Metrics Resolution Throughtput Registration (Alignment) Exposure Systems - UV Projection - Fraunhofer Proximity - Fresnel Contact - Fresnel Advanced DUV, E-Beam, X-Ray, Nano-imprint Resists Positive/Negative Contrast CMTF Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 10 – Slide 7
Lithography Systems Proximity Contact rojection Mask Wafer Fall 2003-MA Schmidt 3.155]6.152]-Lecture 10-Slide 8
Lithography Systems Proximity Contact Projection Mask Wafer Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 10 – Slide 8
Contact/ Proximity Printing Aperture Resist Wafer Incident Plane Wave Proximity Projection Contact Light Intensity at Resist Surface Separation Depends on Type of System Fall 2003-MA Schmidt 3.155]6.152]-Lecture 10-Slide 9
Contact/Proximity Printing Fall 2003 – M.A. Schmidt 3.155J/6.152J – Lecture 10 – Slide 9