TOSHBA The Change of IGBT Package for Strobe Flasher (Unit in-- -m)- T0-220 Class DP SOP-8 TSSOP-8 10.3 MAX Changed to compact package 44 T0-220SM 5.5MAX 10.3 MAX nootno 8 2.5 MAX T0-220FL 2003 Dec DPO54001101 6/22
6/22 2003 Dec DP0540011_01 Thru-Hole Type SMD Type (Unit in : mm) DP The Change of IGBT Package for Strobe Flasher TO-220 Class SOP-8 TSSOP-8 Changed to Compact Package TO-220FL TO-220SM 2.5 10.3 MAX 10.6 MAX 10.3 MAX 10.6 MAX 6.8 MAX 5.5 2.5 MAX 4.4 ±0.2 6.0 ±0.3 5.5MAX. 1.5 ±0.2 3.0 6.4 4.4 0.85 ±0.05
TOSHBA GT5G131 5th Generation with Vr=3.3V 11 Development Concept *** Available for 3. 3v Gate Supply **x 1)Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule 2) Guarantee of maximum Icp=l30a by optimized trench gate design 3)Protection of Gate insulation layer by Zener diode between gate emitter 2/ Low Gate Drive voltage& Space merit I)Low Gate Drive Voltage( Logic Level) Available Icp=130A Control at VGE=3.0V drive New 2)Thinner SMD Package: SOP-8 Package Product Height 1.5+0.2mm: 1.0mm Benefit than DP package 3)Improvement of ESd capability between Gate emitter 13 Schedule Under Mass-producing 2003 Dec DPO54001101 722
7/22 2003 Dec DP0540011_01 [ 1 ] Development Concept *** Available for 3.3V Gate Supply *** 1) Achievement of 3.0V Minimum Gate Drive Voltage by latest design rule 2) Guarantee of Maximum Icp=130A by optimized trench gate design 3) Protection of Gate insulation layer by Zener Diode between gate & emitter [ 2 ] Low Gate Drive Voltage & Space Merit 1) Low Gate Drive Voltage ( Logic Level ) Available Icp=130A Control at VGE=3.0V Drive 2) Thinner SMD Package : SOP-8 Package Height 1.5±0.2mm : 1.0mm Benefit than DP package 3) Improvement of ESD capability between Gate & Emitter [ 3 ] Schedule Under Mass-producing GT5G131 5th Generation with VGE=3.3V New Product New Product
TOSHBA GT8G132 5 h generation with Icp=150A 11 Development Concept *** New Icp=150A**X 1)Available 4.0V Gate Drive New 2)Compact Package: Foot Print Area-Just 50x60mm Product Height --1.6mm 3)High Gate Drivability due to Low Gate Charge and others by latest design rule 4) Protection of Gate insulation layer by Zener diode between gate emitter 2/ Schedule Under mass production 13/ The comparison between 5th GT8G132& 4th GT8G131( the detail is shown in page 12M13 Generation 4th Type Name GT8G132 G8G131 (I)Input Capacitance at VCE=lOV, fIMHz 2800pF 3800pF (2)VCE(sat at VGE=4V, IC=150A) 2.3V 30V at VGE=4V, IC=150A t=1.0 t=1.5 ()Swiching Speed RG51Q2) tfl.us All parameters are described by typical value 2003 Dec DPO54001101 8/22
8/22 2003 Dec DP0540011_01 [ 1 ] Development Concept *** New Icp=150A *** 1) Available 4.0V Gate Drive 2) Compact Package : Foot Print Area – Just 5.0×6.0mm Height -- 1.6mm 3) High Gate Drivability due to Low Gate Charge and others by Latest design Rule 4) Protection of Gate insulation layer by Zener Diode between gate & emitter [ 2 ] Schedule Under Mass Production [ 3 ] The Comparison between 5th GT8G132 & 4th GT8G131 ( the detail is shown in page 12 ∼13 ) GT8G132 5th generation with Icp=150A New Product New Product 5th 4th GT8G132 Gt8G131 (1) Input Capacitance ( at VCE=10V, f=1MHz) 2800pF 3800pF (2) VCE(sat) ( at VGE=4V, IC=150A) 2.3V 3.0V ( at VGE=4V, IC=150A, tr=1.0µs tr=1.5µs RG=51Ω ) tf=1.6µs tf=1.9µs Generation Type Name All parameters are described by typical value. (3) Suiching Speed