@ENEx DCR1473SY/DCR1473SV Phase control thyristor ces November 2002 version. DS4652-51 DS4652-60 October 2003 PACKAGE OUTLINE KEY PARAMETERS 4135A 64000A dvd 1000v/μus dI/dt 500A/μs Higher dv/dt selections available Outline type code: Y Outline type code: V See Package Details for further information Fig. 1 Package outline VOLTAGE RATINGS Part Number Repetitive Peak Voltages Conditions DCR1473SY =0°to125°C. =250mA. DCR1473SV1 1200 Vn. Vow= 10ms 1/2 sine V_.&V_+100V respectively Lower voltage grades available ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table DCR1473SY12 for a 1200V'Y' outline variant DCR1473SV12 for a 1200V'V' outline variant If a lower voltage grade is required, then use VoRN/100 for the DCR1473SY10 for a 1000V Y' outline variant etc this number in any future correspondance relating to your order ote Note: Please use the complete part number when ordering and qu www.dynexsemi.com
DCR1473SY / DCR1473SV 1/9 www.dynexsemi.com Replaces November 2002 version, DS4652-5.1 DS4652-6.0 October 2003 DCR1473SY / DCR1473SV Phase Control Thyristor KEY PARAMETERS VDRM 1200V I T(AV) 4135A I TSM 64000A dVdt* 1000V/µs dI/dt 500A/µs *Higher dV/dt selections available ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table. For example: DCR1473SY12 for a 1200V 'Y' outline variant or DCR1473SV12 for a 1200V 'V' outline variant If a lower voltage grade is required, then use VDRM/100 for the grade required e.g.: DCR1473SY10 for a 1000V 'Y' outline variant etc. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. VOLTAGE RATINGS DCR1473SY12 or DCR1473SV12 Conditions Tvj = 0˚ to 125˚C. I DRM = IRRM = 250mA. VDRM, VRRM = 10ms 1/2 sine. VDSM & VRSM = VDRM & VRRM + 100V respectively. Lower voltage grades available. Part Number Repetitive Peak Voltages VDRM VRRM V 1200 1200 PACKAGE OUTLINE See Package Details for further information. Fig. 1 Package outline Outline type code: Y Outline type code: V
DCR1473SYDCR1473SV @ ENEx CURRENT RATING 60C unless stated otherwise Symbol Parameter Conditions Max Units Double side Cooled Mean on-state current Half wave resistive load 4135A RMS value 6495 Continuous(direct)on-state current 5700 Single Side Cooled(Anode side) Mean on-state current Half wave resistive load RMS value 4090 AAA Continuous(direct) on-state current 3290 CURRENT RATING T=80C unless stated otherwise Symbo Parameter Conditions Max. Units Double side cooled Mean on-state current Half wave resistive load RMS value 5010 AAA Continuous(direct)on-state current 3950 Single Side Cooled(Anode side) Mean on-state current Half wave resistive load 1966 RMS value 3090 AAA Continuous(direct)on-state current 2410 /w.dynexsemi col
DCR1473SY / DCR1473SV 2/9 www.dynexsemi.com Symbol Parameter Conditions Double Side Cooled I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Single Side Cooled (Anode side) I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Max. Units Half wave resistive load 3190 A - 5010 A - 3950 A Half wave resistive load 1966 A - 3090 A - 2410 A Symbol Parameter Conditions Double Side Cooled I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Single Side Cooled (Anode side) I T(AV) Mean on-state current I T(RMS) RMS value I T Continuous (direct) on-state current Max. Units Half wave resistive load 4135 A - 6495 A - 5700 A Half wave resistive load 2605 A - 4090 A - 3290 A CURRENT RATING Tcase = 80˚C unless stated otherwise. CURRENT RATING Tcase = 60˚C unless stated otherwise
@ ENEx DCR1473SYDCR1473sV SURGE RATINGS Symbol Parameter Conditions Max. Uni Surge(non-repetitive)on-state current 10ms half sine: T.= 125C 51.0 ?t It for fusing V=50%V-1/4 sine 131x106A2s Surge(non-repetitive)on-state current 10ms half sine: T 64.0 KA Pt Pt for fusing V=0 2048×10°A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Min. Max. Unit Double side cooled 00095°W Thermal resistance- junction to case Anode dc 0.019°W Single side cooled Cathode dc Double sid Thermal resistance. case to heatsink Clamping force 43.0kN 0002 with mounting compound Single side On-state(conducting) 1359C T Virtual junction temperature Reverse(blocking) 125 Storage temperature range 55125°c Clamping force 380470kN www.dynexsemi.com
DCR1473SY / DCR1473SV 3/9 www.dynexsemi.com SURGE RATINGS Conditions 10ms half sine; Tcase = 125o C VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125o C VR = 0 Symbol Parameter Max. Units I TSM Surge (non-repetitive) on-state current I 2 t I2 t for fusing I TSM Surge (non-repetitive) on-state current I 2 t I 2 t for fusing 20.48 x 106 A2 s 64.0 kA 13.1x 106 A2 s 51.0 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units o Anode dc - 0.019 C/W Clamping force 43.0kN with mounting compound R Thermal resistance - case to heatsink th(c-h) Double side - 0.002 125 o C Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side - R Thermal resistance - junction to case th(j-c) Single side cooled Symbol Parameter Clamping force 38.0 47.0 kN -55 125 o C - On-state (conducting) - 135 o C - 0.004 o C/W o C/W Cathode dc - - o C/W Double side cooled - 0.0095 o C/W
DCR1473SYDCR1473SV @ENEx DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Max. Units IRRM/rM Peak reverse and off-state current At VaBNvpgy, Tease 125C mA dV/dt Maximum linear rate of rise of off-state voltage To 67%VaM T=125.C, gate open circuit 1000V/us From 67%V. to Repetitive 50Hz 250As dI/dt Rate of rise of on-state current t=05μsto1AT Non-repetitive 500Aus V Threshold voltage AtT=125°C 0.824V On-state slope resistance AtT=1259 0.066mg Delay time V.=67%V Gate source 30V 15Q t=05us,T=25°c GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditi Max.Units Gate trigger voltage V=5V.T=25° 4.0 lgr Gate trigger current DRM =5V, Tase=25C Gate non-trigger voltage AtV.T=125℃ 025V Peak forward gate voltage Anode positive with respect to cathode Peak forward gate voltage Anode negative with respect to cathode VRoM Peak reverse gate voltage Peak forward gate current Anode positive with respect to cathode Peak gate power See Gate Characteristics curve/table Mean gate power 10W /w.dynexsemi col
DCR1473SY / DCR1473SV 4/9 www.dynexsemi.com DYNAMIC CHARACTERISTICS Symbol Conditions Parameter I RRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125o C From 67% VDRM to 1000A Gate source 20V, 10Ω t r = 0.5µs to 1A, Tj = 125o C dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125o C, gate open circuit Max. Units 250 mA 1000 V/µs Repetitive 50Hz 250 A/µs Non-repetitive 500 A/µs dI/dt Rate of rise of on-state current VT(TO) Threshold voltage At Tvj = 125o C r T On-state slope resistance At Tvj = 125o C t gd Delay time 0.824 V 0.066 mΩ 2.0 µs VD = 67% VDRM, Gate source 30V, 15Ω t r = 0.5µs, Tj = 25o C GATE TRIGGER CHARACTERISTICS AND RATINGS VDRM = 5V, Tcase = 25o C Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25o C I GT Gate trigger current VGD Gate non-trigger voltage At VDRM Tcase = 125o C VFGM Peak forward gate voltage Anode positive with respect to cathode VFGN Peak forward gate voltage Anode negative with respect to cathode VRGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode PG(PK) Peak gate power See Gate Characteristics curve/table PG(AV) Mean gate power 4.0 V 400 mA 0.25 V 30 V 0.25 V 5 V 30 A 150 W 10 W Max. Units
@ ENEx DCR1473SY/DCR1473sV CURVES 10000 Measured u 田 4000 3 phase 8000 T;=125℃ 6000 598 钿锺日 1000 2000 3000 4000 nstantaneous on-state voltageⅥr·(V) Mean on-state current, IT(AV)-(A) Fig 2 Maximum(limit)on-state characteristics ig. 3 Power dissipation curves Table gives pulse power PG(PK in Watts Pulse width 10 =25℃ 125°C 0.001 0.1 10 Gate trigger current IGT-(A) Fig. 4 Gate characteristics www.dynexsemi.com
DCR1473SY / DCR1473SV 5/9 www.dynexsemi.com 0 1000 2000 3000 4000 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Mean power dissipation - (W) dc 1/2 wave 3 phase 6 phase CURVES Fig. 2 Maximum (limit) on-state characteristics Fig. 3 Power dissipation curves Fig. 4 Gate characteristics 0.5 1.0 1.5 Instantaneous on-state voltage VT - (V) 0 2000 4000 6000 8000 10000 Instantaneous on-state current IT - (A) Measured under pulse conditions Tj = 25˚C Tj = 125˚C 0.001 0.01 0.1 1 10 Gate trigger current IGT - (A) 100 10 1 0.1 Gate trigger voltage VGT - (V) 100W 50W 20W 10W 5W 2W Tj = 125˚C Tj = -40˚C Tj = 25˚C Upper limit 99% VFGM IFGM Lower limit 1% Pulse width µs 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - Pulse frequency Hz Table gives pulse power PG(PK) in Watts