RRM 2500V 420A Fast Recovery Diode FSM 8.5kA 17V 5SDF05D2505 062mg DClink 1500V YA1114-03 Patented free-floating silicon technology Low on-state and switching losses Optimized for use as freewheeling diode in GTo converters Standard press-pack housing, hermetically cold-welded Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage 2500V Half sine wave, tp=10 ms, f=50 Hz RRM Repetitive peak reverse current ≤ 50 mA VR= VRRM T=125C VoClink Permanent DC voltage for 100 FIT failure rate 1500V 100% Duty Ambient cosmic radiati VoClink Permanent DC voltage for 100 FIT failure rate 5%Du I sea level in open air. n at Mechanical data(see Fig 12) 10 kN Mounting force max 12 KN Acceleration. Device unclamped 50m/s Device clamped 200m/s 0.25kg Surface creepage distance > 30 mm Air strike distance 20 mm ABB Semiconductors AG reserves the right to change specifications without notice. AR
ABB Semiconductors AG reserves the right to change specifications without notice. VRRM = 2500 V IFAVM = 420 A IFSM = 8.5 kA VF0 = 1.7 V rF = 0.62 mΩ VDClink = 1500 V Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters • Standard press-pack housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage 2500 V Half sine wave, tP = 10 ms, f = 50 Hz IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM, Tj = 125°C VDClink Permanent DC voltage for 100 FIT failure rate 1500 V 100% Duty VDClink Permanent DC voltage for 100 FIT failure rate V 5% Duty Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 12) min. 10 kN Fm Mounting force max. 12 kN a Acceleration: Device unclamped Device clamped 50 200 m/s2 m/s2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Fast Recovery Diode 5SDF 05D2505
5SDF05D2505 On-state(see Fig. 2, 3) lFAVM Max average on-state current 420 a Half sine wave, Tc=85C IFRMs Max RMS on-state current 670A lFSM Max peak non-repetitive 8.5 ka t 10 ms Before surge surge current 27 ka tp 1msT=T=125°c Jl'dt Max surge current integral 036105A3stp= 10 ms After surg 03610°A2stp= 1 ms VR=OV Forward voltage drop ≤23V|F 1000A Threshold voltage 1.7V Approximation for T=125.C Slope resistance 062mg2=500.3500A Turn-on(see Fig 4, 5) Peak forward recovery voltage s16vdt:50455-1250 Turn-off (see Fig. 6 to 11) Reverse recovery current s470 a dildo=3004s,=700A Reverse recovery charge ≤840心c|T=125°c VM=2300V Turn-off energy 0.34J Cs= 2uF(GTO snubber circuit) Thermal (see Fig. 1) Operating junction temperature range -40..125°C Storage temperature range -40..125°C Thermal resistance junction to case s 80 KKW Anode side cooled ≤80KKw「 Cathode side cooled 40 Kkw Double side cooled 10.12kN Rthch Thermal resistance case to heatsink s 16 Kk Single side cooled 8 KkW Double side cooled Analytical function for transient thermal impedance. 3 Zmc(t=∑R(1-e) RI(KkW) 9510.57 71 1.33 (S) 000900044 Fm=10.12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 2 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 2 of 6 On-state (see Fig. 2, 3) IFAVM Max. average on-state current 420 A IFRMS Max. RMS on-state current 670 A Half sine wave, Tc = 85°C IFSM Max. peak non-repetitive 8.5 kA tp = 10 ms Before surge: surge current 27 kA tp = 1 ms Tc = Tj = 125°C 0.36⋅106 A2 I s tp = 10 ms After surge: 2 dt Max. surge current integral 0.36⋅106 A2 s tp = 1 ms VR ≈ 0 V VF Forward voltage drop ≤ 2.3 V IF = 1000 A VF0 Threshold voltage 1.7 V Approximation for rF Slope resistance 0.62 mΩ IF = 500…3500 A Tj = 125°C Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 16 V di/dt = 500 A/µs, Tj = 125°C Turn-off (see Fig. 6 to 11) Irr Reverse recovery current ≤ 470 A Qrr Reverse recovery charge ≤ 840 µC Err Turn-off energy ≤ 0.34 J di/dt = 300 A/µs, IF = 700 A, Tj = 125°C, VRM = 2300 V, CS = 2µF (GTO snubber circuit) Thermal (see Fig. 1) Tj Operating junction temperature range -40...125°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled RthCH Thermal resistance case to heatsink ≤ 16 K/kW Single side cooled Fm = 10… 12 kN ≤ 8 K/kW Double side cooled Analytical function for transient thermal impedance. i 12 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Z (t) = R (1 - e ) n i 1 - t / thJC i = τ i Fm = 10… 12 kN Double side cooled
5SDF05D2505 45 0..12kN t(s) ig. 1 Transient thermal impedance (junction-to-case)Vs time in analytical and graphical form( max. values 5000 25C 4000 Idt 2000 and r. =0.62 mQ V(V Fig 2 Forward current vS forward voltage(typ Fig 3 Surge current and fusing integral vs pulse and max values)and linear approximation width( max values) for non-repetitive, half- of max. curve at125°C. sinusoidal surge current pulses ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 3 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 3 of 6 Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values). Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses
5SDF05D2505 V,l(1) (t) t(typ)≤10s 1000 1500 Fig 4 Typical forward voltage waveform when the Fig 5 Forward recovery voltage Vs turn-on di/dt diode is turned on with a high dildt. (max values) En=∫()V()ot di/dt (t) Fig 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in gto circuits ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 4 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 4 of 6 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). Fig. 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as often used in GTO circuits
5SDF05D2505 1000 C4=1…3uF C.=1.3uF l=2000A T=125°c 400HVRM:No influence V=1.5.2.5 kV =2000A 300 700A 200 200 200 didt(A/μs) Fig 7 Reverse recovery current vs. turn off di/dt Fig 8 Reverse recovery charge vs. turn off di/dt (max values) (max values) 500 l=300A =700A 125°C 400 T=125°c V=1.5.2.5kV Vu=1.5.25kV di/dt(A/us) di/dt(A/us) Fig. 9 Turn-off energy vs turn-off di/dt for lF= 300 Fig. 10 Turn-off energy Vs. turn-off di/dt for lF =700 A(max values A(max values) ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep 01 page 5 of 6
5SDF 05D2505 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1114-03 Sep. 01 page 5 of 6 Fig. 7 Reverse recovery current vs. turn off di/dt (max. values). Fig. 8 Reverse recovery charge vs. turn off di/dt (max. values). Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300 A (max. values). Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700 A (max. values)