a siege MP02XXX190 Series Phase Control dual scr. scr/ diode modules es January 2000 version, DS4479-40 Ds44795.0July2002 FEATURES KEY PARAMETERS ■Dua| Device module v 1200 L Electrically Isolated Package 5500A Pressure Contact Construction T(AV)(per arm) 190A International Standard Footprint 3000v Alumina(non-toxic)Isolation Medium Code Circuit APPLICATIONS HBT Motor control HBP ■ Heater Control ■ AC Phase Control HBN Fig 1 Circuit diagrams VOL TAGE RATINGS Conditions Number Voltages MP02XXX190-12 1200T=125C MP02XXX190-10 =30mA v&v 巴巴巴 MP02XXX190-08 respectively Lower voltage grades available ORDERING INFORMATION Module type code: MP02 For further information see Package Details Order As MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08 Fig 2 Electrical connections(not to scale) MP02HBP190-12 or MP02HBP190-10 or MPo2HBP190-08 MPo2HBN190-12 or MP02HBN190-10 or MPo2HBN190-08 Note: When ordering, please use the complete part number www.dynexsemi.com
1/8 www.dynexsemi.com MP02XXX190 Series MP02XXX190 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2000 version, DS4479-4.0 DS4479-5.0 July 2002 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (non-toxic) Isolation Medium APPLICATIONS ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control VOLTAGE RATINGS ORDERING INFORMATION Order As: MP02HBT190-12 or MP02HBT190-10 or MP02HBT190-08 MP02HBP190-12 or MP02HBP190-10 or MP02HBP190-08 MP02HBN190-12 or MP02HBN190-10 or MP02HBN190-08 Note: When ordering, please use the complete part number. KEY PARAMETERS VDRM 1200V I TSM 5500A I T(AV)(per arm) 190A Visol 3000V Code Circuit HBT HBP HBN Fig.1 Circuit diagrams 1 23 Fig. 2 Electrical connections - (not to scale) Module type code: MP02. For further information see Package Details. Lower voltage grades available. Repetitive Peak Voltages VDRM VRRM Type Number 1200 1000 1000 MP02XXX190-12 MP02XXX190-10 MP02XXX190-08 Tvj = 125o C I DRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respectively Conditions
MP02XXX190 Series EUrex SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS- PER ARM Stresses above those listed under Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability Symbol Parameter Test Conditions Max. Units Mean on-state current Half wave resistive load 75C 85℃16 A RMS value T=75℃ Surge(non-repetitive)on-current 10ms half sine, T=125 C 6.8 KA ?t 1t for fusing 231X10A2s Surge(non-repetitive)on-current 10ms half sine, T=125 C KA ?t 1t for fusing 150X A2s Isolation voltage Commoned terminals to base plate 3000 AC RMS. 1 min. 50Hz THERMAL AND MECHANICAL RATINGS Parameter Test Conditions M Max. Units Thermal resistance- junction to case 0.21C/kW (per thyristor or diode) Half wave -0.22cW 3 Phase 0.23C/kW Thermal resistance- case to heatsink Mounting torque= 6Nm (per thyristor or diode) with mounting compound T Virtual junction temperature Reverse(blocking 12 T Storage temperature range -40125 Screw torque Mounting-M6 6(55)Nm(b ins) Electrical connections-M6 5 (44)Nm(lb ins) Weight(nominal) www.dynexsemi.com
2/8 www.dynexsemi.com MP02XXX190 Series ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Test Conditions Half wave resistive load Tcase = 75˚C Tcase = 85˚C Tcase = 75˚C 10ms half sine, Tj = 125˚C VR = 0 10ms half sine, Tj = 125˚C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Symbol I T(AV) I T(RMS I TSM I 2 t I TSM I 2 t Visol Units A A A kA A2 s kA A2 s V Max. 190 160 300 6.8 231 x 103 5.5 150 x 103 3000 Parameter Mean on-state current RMS value Surge (non-repetitive) on-current I 2 t for fusing Surge (non-repetitive) on-current I 2 t for fusing Isolation voltage Test Conditions dc Half wave 3 Phase Mounting torque = 6Nm with mounting compound Reverse (blocking) - Mounting - M6 Electrical connections - M6 - Parameter Thermal resistance - junction to case (per thyristor or diode) Thermal resistance - case to heatsink (per thyristor or diode) Virtual junction temperature Storage temperature range Screw torque Weight (nominal) THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-hs) Tvj Tstg - - Units ˚C/kW ˚C/kW ˚C/kW ˚C/kW ˚C ˚C Nm (lb.ins) Nm (lb.ins) g Max. 0.21 0.22 0.23 0.07 125 125 6 (55) 5 (44) 350 Min. - - - - - –40 - - -
Eex MP02XXX190 Series DYNAMIC CHARACTERISTICS- THYRISTOR Symbol Parameter Test Conditions Min. Max.Units Peak reverse and off-state current At VRRNVDRM, T=125C V/dt Linear rate of rise of off-state voltage To 67%Vpu, T, =125C I 1000 Vus dI/dt Rate of rise of on-state current From 67%VoRy to 400A, Repetitive 50Hz 500Aus Gate source 20V. 20Q t =0.5us, T,=125C Threshold voltage AtT.=125°C. See note1 0.88V On-state slope resistance AtT= 125 C. See note 1 Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. U Gate trigger voltage Vm=5V,T=25°C 30V IGT Gate trigger current v=5V.T=25°C Gate non-trigger voltage AtVT=125°C 025V Peak forward gate voltage Anode positive with respect to cathode Peak forward gate voltage Anode negative with respect to cathode 025V Peak reverse gate voltage Peak forward gate current Anode positive with respect to cathode 10 Peak gate powe See table fig 5 P Mean gate power 5 3/8 www.dynexsemi.com
3/8 www.dynexsemi.com MP02XXX190 Series Units mA V/µs A/µs V mΩ Test Conditions At VRRM/VDRM, Tj = 125˚C To 67% VDRM, Tj = 125˚C From 67% VDRM to 400A, Repetitive 50Hz Gate source 20V, 20Ω, t r = 0.5µs, Tj = 125˚C At Tvj = 125˚C. See note 1 At Tvj = 125˚C. See note 1 Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Threshold voltage On-state slope resistance DYNAMIC CHARACTERISTICS - THYRISTOR Symbol I RRM/IDRM dV/dt dI/dt VT(TO) rT Max. 30 1000 500 0.88 0.7 Min. - - - - - Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25o C VDRM = 5V, Tcase = 25o C At VDRM, Tcase = 125o C Anode positive with respect to cathode Anode negative with respect to cathode - Anode positive with respect to cathode See table fig. 5 - Symbol VGT I GT VGD VFGM VFGN VRGM I FGM PGM PG(AV) GATE TRIGGER CHARACTERISTICS AND RATINGS Max. 3.0 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
MP02XXX190 Series EUrex SEMICONDUCTOR c重田 12t=kxt Hl T;=125℃ 15 H十 与6g四056g西3g0@50 50甘 十口士 101234510203050 .5 Instantaneous on-state voltage, VI-V) Cycles at 50Hz Fig 3 Maximum(limit)on-state characteristics Fig. 4 Surge(non-repetitive )on-state current vs time (Thyristor or diode with 50%Voom at T.=125c) 0.3 HH址 02 0 Region of certain triggering 0.1 0.001 0.010 0.100 Gate trigger current, IGT(A) Time-(s Fig 5 Gate characteristics g 6 Transient thermal impedance-dc ww. done .Co
4/8 www.dynexsemi.com MP02XXX190 Series 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 0 500 1000 1500 2000 Instantaneous on-state current, IT - (A) Measured under pulse conditions Tj = 125˚C Fig. 6 Transient thermal impedance - dc Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 125˚C) Fig. 5 Gate characteristics 0.001 0.010 0.100 1.0 10 100 Time - (s) 0 0.1 0.2 0.3 Thermal impedance - (˚C/W) Rth(j-hs) Rth(j-c) 0.001 0.01 0.1 1 10 Gate trigger current, IGT - (A) 100 10 1 0.1 Gate trigger voltage, VGT - (V) 100W 50W 10W 20W 5W Region of certain triggering Upper limit 95% Lower limit 5% Tj = 125˚C Tj = 25˚C Tj = -40˚C VGD IFGM 20 15 10 5 0 Peak half sine wave on-state current - (kA) 1 10 1 2 3 45 50 ms Cycles at 50Hz Duration 50 100 I2t value - (A2s x 103) I2t I 2t = Î2 x t 2 150 10 20 30
Eex MP02XXX190 Series 250 E 8 100 150 200250300 Mean on-state current, IT(AV-(A) Mean on-state current, IT(Av-(A) Fig 7 On-state power loss per arm vs on-state current at Fig 8 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz specified conduction angles, square wave 50/60Hz 四与四E9≌8≌ 3060°90°120°180 20°180 250300 Mean on-state current, IT(AM(A) Mean on-state current, IT(AV-(A) Fig 9 Maximum permissible case temperature vs on-state Fig 10 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz current at specified conduction angles, square wave 50/60Hz www.dynexsemi.com
5/8 www.dynexsemi.com MP02XXX190 Series Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 300 250 200 150 100 50 0 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ 30˚ 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 400 350 300 250 200 150 100 50 0 On-state power loss per device - (W) 180˚ 120˚ 90˚ 60˚ 30˚ d.c. 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 120 100 80 60 40 20 0 Maximum permissible case temperature - (˚C) 30˚ 60˚ 90˚ 120˚ 180˚ 140 0 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 120 100 80 60 40 20 0 Maximum permissible case temperature - (˚C) 30˚ 60˚ 90˚ 120˚ 180˚ 140 d.c