TOSHBA Rectifier diode Dec,2003 TOSHIBA Semiconductor Company Discrete semiconductor division 2003 Dec DPO54000801 112
1/12 2003 Dec DP0540008_01 Rectifier Diode Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division
TOSHBA Rectifier Diode Current vs Mounting Area 100 High Power Small Package PFLAT TFP L-FLAT High Power ■■■ r MR S-FL HFLAT-FLAT2 MA十fSMB Small Package 0.1 100 1000 Mounting Area [mm] 2003 Dec DPO54000801 2/12
2/12 2003 Dec DP0540008_01 0.1 1 10 100 1 10 100 1000 Mounting Area [mm2 ] Current Rating [A] Small Package High Power TFP MR I-FLAT2 (SMB) I-FLAT (SMA) M-FLAT S-FLAT US-FLAT High Power & Small Package PLAN L-FLAT D-FLAT Rectifier Diode : Current vs Mounting Area
TOSHBA Rectifier Diode: Flat Package Series Unit mm US-FLATTM S-FLATTM M-FLAT TM Thin 06 098 098 1.25 1.6 2.4 19 Small 2.6 2.5 About 3.5 3.8 50%Cut 4.7 Height 0.6mm TYP Height 0.98mm TYP Height 0.98mm TYP Mount Area 1.25 x 2. 5mm Mount area 1.6x 3. 5mm Mount Area 2. 4 x 4,7mm 2003 Dec DPO54000801 312
3/12 2003 Dec DP0540008_01 Height 0.6mm TYP Mount Area 1.25 x 2.5mm 0.6 2.5 1.9 1.25 0.98 4.7 3.8 2.4 0.98 3.5 2.6 1.6 US-FLAT TM M-FLAT TM S-FLAT TM Height 0.98mm TYP Mount Area 1.6 x 3.5mm Height 0.98mm TYP Mount Area 2.4 x 4.7mm Unit:mm Small Thin About 50%Cut Rectifier Diode : Flat Package Series
TOSHBA High Power Rating Rectifier Diode( Flat Package Series) Mount Area -Package Rating Bonding type, High o I-FLAT/M-FLAT 10 I Lead Clamp type EEoo2 (SC-59 $FLA千 fSc US-FLAT 0.2 04 0.6 0.8 1.2 Package Rating P(w) USC US-FLAT The mounting area of US-FLat and usc package are the same US-FLAT is thin flat package of 0. 6mm(typ) height 125 Moreover, it has high power dissipation according to lead clamp structure 2003 Dec DPO54000801 412
4/12 2003 Dec DP0540008_01 S-FLAT I-FLAT/M-FLAT USC Bonding type Lead Clamp type Mount Area - Package Rating 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 Package Rating P(W) Mount Area(mm 2 ) US-FLAT 2.5 1.7 1.25 0.9 USC US-FLAT 0.6 2.5 1.9 1.25 S-MINI (SC-59) The mounting area of US-FLAT and USC package are the same. US-FLAT is thin flat package of 0.6mm(typ) height. Moreover, it has high power dissipation according to lead clamp structure. High High Power Rating : Rectifier Diode (Flat Package Series)
TOSHBA Trench SBD Structure Features Metal VF-IR Trade-off Curve Trench Conventional sBd SBD (1)Low VF and Low IR Metal R (sTable IR Improve Trade-off Planar (3)Small Package Trench sBD SBD Example VE Max Part Electrical characteristics Remark Ratings Number VRRM lF(Av) RRM l V2=5V Vo=30V CRSO130V 1A037V. 0.7A60UA TYP 1.5mA MAX LOW VE CRS0230V 1A 0.40V MAX. O.7A15UA TYP. 50UA MAX. LOw IR& LOWVF1 CRSO330V 1A045V MAX.0.7A 0.5UA TYP. 100UA MAX LOW R CRS01. VEM=0.37V CRS03: IR=O.5UA@ VR=5V Very Low Forward Drop Lowest Leakage Current at the Actual CRS02: VFM=0, 4v&R=50UA System Bus Voltage Because of advanced trench structure Best Suited for Use in the voltage Regulation Circuit of Cellular Phones 2003 Dec DPO54000801 512
5/12 2003 Dec DP0540008_01 (1)Low VF and Low IR (2)Stable IR (3)Small Package Structure Structure Trench SBD Metal A K P K Planar SBD Metal A P Part Max. Ratings Electrical Characteristics Remark Number VRRM IF(AV) VFM IF VR=5V VR=30V CRS01 30V 1A 0.37V MAX. 0.7A 60uA TYP. 1.5mA MAX. Low VF CRS02 30V 1A 0.40V MAX. 0.7A 15uA TYP. 50uA MAX. Low IR & Low VF CRS03 30V 1A 0.45V MAX. 0.7A 0.5uA TYP. 100uA MAX. Low IR IRRM CRS02 : VFM=0.4V & IR=50uA Because of Advanced Trench Structure Features Features VF - IR Trade-off Curve VF IR Trench SBD Conventional SBD Improve Trade-off CRS03 : IR=0.5uA @ VR=5V Lowest Leakage Current at the Actual System Bus Voltage Best Suited for Use in the Voltage Regulation Circuit of Cellular Phones CRS01 : VFM=0.37V Very Low Forward Drop Example Trench SBD