VDRM E 2500 V Gate turn-off Thyristor ITGOM E 3000 A 30 KA v =1.50V 5SGA30J2501 =0.33ms Voclin 1400 V Doc. No. 5SYA 1213-02 Aug 2000 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500VVeR≥2V VRRM Repetitive peak reverse voltage 17V IDRM Repetitive peak off-state current< 100 mA VD=VDRM VeP≥2V IRRM Repetitive peak reverse current< 50 mA VR=VE RGK= Permanent DC voltage for 100 1400V-40≤T≤125°. Ambient cosmic FIT failure rate radiation at sea level in open air Mechanical data (see Fig 4) Mounting force max 44 kN A Acceleration Device unclamped 50m/s2 Device clamped 200m/s2 M Weight 1.3 kg Surface creepage distance ≥33mm D Air strike distance ≥15mm ABB Semiconductors AG reserves the right to change specifications without notice. ABR
ABB Semiconductors AG reserves the right to change specifications without notice. VDRM = 2500 V ITGQM = 3000 A ITSM = 30 kA VT0 = 1.50 V rT = 0.33 mΩ VDClin = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VDRM Repetitive peak off-state voltage 2500 V VGR ≥ 2V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 100 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 FIT failure rate 1400 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 4) Fm min. 36 kN Mounting force max. 44 kN A Acceleration: Device unclamped Device clamped 50 200 m/s2 m/s2 M Weight 1.3 kg DS Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 15 mm
5sGA30J2501 GTO Data On-state Max average on-state current 1300A Half sine wave, Tc =85C ITRMs Max RMs on-state current 2040A ITSMMax. peak non-repetitive 30 ka tp 10msT=125℃c surge current 51 katp 1 ms After surge 1?t Limiting load integral 45010°A2st= 10 ms VD=VR=OV 1.30106A2stp On-state voltage 2.50V 3000A To Threshold voltage 1.50V r=400-4000AT=125° Slope resistance 0.33mg Holding current 100A T=25°C Gate Gate trigger voltage 1.2V 24VT;=25°C Gate trigger current 4.0A RA =0.1 Q2 VGRM Repetitive peak reverse voltage17V GRM Repetitive peak reverse current 50 mA V Turn-on switching di/dterit Max. rate of rise of on-state 500Apsf=200z=3000A,T= current 1000 A/us f=1Hz GM=30 A, dig/dt=20 A/us Delay time 2.5μs 0.5VRMT=125°C Rise time 5.0ys =3000 a di/dt=300Aμs ton(min)Min on-time 100 Hs IGM= 30a dig/dt= 20 A/us Turn-on energy per pulse 2.00 Ws C 5 uF Rs 5Ω Turn-off switching Max controllable turn -off 3000A VoM= VDRM digo/dt 40 Aus current 5 HF ≤0.3uH Storage time 250μsV= DRM Fall time 3.0 Aus tot Min off-time 100 us ITGQ = ITGOM Eoff Turn-off energy per pulse 4.7 WsCs 5μFR 5Q Peak turn - off gate current 1000A Ls≤0.3pH ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000 page 2 of 6
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 2 of 6 GTO Data On-state ITAVM Max. average on-state current 1300 A Half sine wave, TC = 85 °C ITRMS Max. RMS on-state current 2040 A ITSM 30 kA tP = 10 ms Tj Max. peak non-repetitive = 125°C surge current 51 kA tP = 1 ms After surge: I 2 t Limiting load integral 4.50⋅106 A2 s tP = 10 ms VD = VR = 0V 1.30⋅106 A2 s tP = 1 ms VT On-state voltage 2.50 V IT = 3000 A VT0 Threshold voltage 1.50 V IT = 400 - 4000 A Tj = 125 °C rT Slope resistance 0.33 mΩ IH Holding current 100 A Tj = 25 °C Gate VGT Gate trigger voltage 1.2 V VD = 24 V Tj = 25 °C IGT Gate trigger current 4.0 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VGR = VGRM Turn-on switching di/dtcrit Max. rate of rise of on-state 500 A/µs f = 200Hz IT = 3000 A, Tj = 125 °C current 1000 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs td Delay time 2.5 µs VD = 0.5 VDRM Tj = 125 °C tr Rise time 5.0 µs IT = 3000 A di/dt = 300 A/µs ton(min) Min. on-time 100 µs IGM = 30 A diG/dt = 20 A/µs Eon Turn-on energy per pulse 2.00 Ws CS = 5 µF RS = 5 Ω Turn-off switching ITGQM Max controllable turn-off 3000 A VDM = VDRM diGQ/dt = 40 A/µs current CS = 5 µF LS ≤ 0.3 µH ts Storage time 25.0 µs VD = ½ VDRM VDM = VDRM tf Fall time 3.0 µs Tj = 125 °C diGQ/dt = 40 A/µs toff(min) Min. off-time 100 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 4.7 Ws CS = 5 µF RS = 5 Ω IGQM Peak turn-off gate current 1000 A LS ≤ 0.3 µH
5sGA30J2501 hermal Storage and operating 40.125°C junction temperature range Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled Rthch Thermal resistance case to 3K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal pedance 4 Zthjc(t ∑ R(1-e t/ ti RI(K/kW)5.4 4.5 1.7 0.4 )120.1700101 ZtJc(K/kW) 642o t(s) Fig. 1 Transient thermal impedance, junction to case ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 3 of 6 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled RthCH Thermal resistance case to 3 K/kW Single side cooled heat sink 3 K/kW Double side cooled i 12 3 4 RI (K/kW) 5.4 4.5 1.7 0.4 Analytical function for transient thermal impedance: Z (t) = R (1 - e ) 4 i 1 -t / thJC ∑ i = τi τi (s) 1.2 0.17 0.01 0.001 Fig. 1 Transient thermal impedance, junction to case
5sGA30J2501 G"C Max 125cM Fig 2 On-state characteristics ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 4 of 6 Fig. 2 On-state characteristics
5sGA30J2501 Anode dild 0.9h 0.9v 01V 0.25 TX Gate dig/dt GM 0.1l VG (t) dico/dt Fig 3 General current and voltage waveforms with GTO-specific symbols cant conoco D3n mm(ANG 12)l center Fig 4 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug 2000 page 5 of 6
5SGA 30J2501 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1213-02 Aug. 2000 page 5 of 6 Fig. 3 General current and voltage waveforms with GTO-specific symbols Fig. 4 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise