1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition. Referring to information in the class notes and text, answer the following three questions. (Grade will depend more on how you justify your design, rather than on its
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Sputter deposition: Read Plummer Chap 9, Sections 9.2.2.2 to 9.3.10. Consider reading Ohring 1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition
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1.(Plummer 10.3)In a certain process, it is desired that the pitch of metal lines be equal to or less than 1.Omm(the pitch equals one metal linewidth plus one spacing between metal lines, measured at top of features). Assume that the metal linewidth and spacing are
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All the questions are from Plummer, Chapter 10, p.679-680, which was handed out in class 1)Question 10.3 2) Question 10.4 3)Question 10.5 4) Question 10.6
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I. Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm< A <500nm. Assume NA=0.26. Recalculate on the same plot for NA=0.41. Discuss the implication of these plots for the technologist that must manufacture transistors with 0.5 um
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1)Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm
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Problem 1 Deal-Grove model states that the thickness of the oxide is related to a time constant r and two constants A and b by the relation
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Solubility limit for P at 1273 K is Co 2 1 x 10 cm\. Intrinsic carrier concentration is 10 cm\. Thus, before including higher order terms, Do=13x10-4 cm2/s. But with first order and second order correction terms
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Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)
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Due Sept 17. 2002 1. a) Mean free path 2= kBI d-p where k=1.38×102,T=293K,p=10mTor=133Pa,d=1A=100m 38×10-3(293 6.9cm ford=1A Jr(m)(332)017mfrd=2A b) Use the ideal gas law pV=nkB T 1.33Pa vk7(138×102X90)33×10m-33×10cm3
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中国科学技术大学：《微波技术基础》课程教学课件（讲稿）第四章 微波集成传输线 Microwave Integrated Transmission Lines曲阜师范大学：物联网工程专业《无线传感网技术及应用》课程教学大纲清华大学：《数字图像处理 Digital Image Processing》课程教学资源（PPT课件讲稿）第六章 图像编码《电子技术》课程电子教案（PPT课件，模拟电路部分）第六章 非线性处理器合肥工业大学：《数字电子技术基础》课程教学资源（课件讲稿）第六章 时序逻辑电路宝鸡文理学院：《电子技术》课程PPT教学课件（数字电路）第四章 组合逻辑电路长江大学：电工电子国家级实验教学示范中心《电力系统及自动化综合》课程实验指导书《电子工程师手册》学习资料（英文版）chapter 22 Semiconductors私立华联学院：《汽车电工电子技术》课程教学资源（电子教案）第二章 直流电路电子科技大学：《时域测试技术综合实验 Comprehensive Experiment of Time Domain Testing Technology》课程教学资源（课件讲稿）实验六 信号采集触发功能设计实验《数字通信 Digital Communications》课程教学课件（讲稿）第4章 AWGN信道的最佳接收机 4.9 CPM信号的最佳接收机 4.10 有线和无线通信系统的性能分析