Gas flux across concentration gradient: J=h(Cg-Cs ), Cs=concentration at surface Flux for chemical reaction: J(#/vol s)=k Cs, where k=koexp[-AG/(kBT)I Film growth velos/ hk ii where Nr is number of deposited species/cm Diffusio
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1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition. Referring to information in the class notes and text, answer the following three questions. (Grade will depend more on how you justify your design, rather than on its
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Sputter deposition: Read Plummer Chap 9, Sections 9.2.2.2 to 9.3.10. Consider reading Ohring 1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition
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1.(Plummer 10.3)In a certain process, it is desired that the pitch of metal lines be equal to or less than 1.Omm(the pitch equals one metal linewidth plus one spacing between metal lines, measured at top of features). Assume that the metal linewidth and spacing are
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All the questions are from Plummer, Chapter 10, p.679-680, which was handed out in class 1)Question 10.3 2) Question 10.4 3)Question 10.5 4) Question 10.6
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I. Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm< A <500nm. Assume NA=0.26. Recalculate on the same plot for NA=0.41. Discuss the implication of these plots for the technologist that must manufacture transistors with 0.5 um
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1)Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm
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Problem 1 Deal-Grove model states that the thickness of the oxide is related to a time constant r and two constants A and b by the relation
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Solubility limit for P at 1273 K is Co 2 1 x 10 cm\. Intrinsic carrier concentration is 10 cm\. Thus, before including higher order terms, Do=13x10-4 cm2/s. But with first order and second order correction terms
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Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)
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