Due Sept 17. 2002 1. a) Mean free path 2= kBI d-p where k=1.38×102,T=293K,p=10mTor=133Pa,d=1A=100m 38×10-3(293 6.9cm ford=1A Jr(m)(332)017mfrd=2A b) Use the ideal gas law pV=nkB T 1.33Pa vk7(138×102X90)33×10m-33×10cm3

Reading Assignment: Kinetics, Vac. Tech: Campbell, 10.1-1. 4(or Ohring Ch 2) 1. Consider a vacuum system at room temperature that has been pumped down to a 10 m-Torr with mostly nitrogen as determined from the residual gas analyzer. Make an in

MEMS Mask layout Die leve Dark-field mask Dimensions are in micron

Microelectronics Processing technology Fall Term 2003 Instructions for the microfluidics Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC and mEMs Lab reports will be used Contents: Your Letter should include the following sections y-line(Author, affiliation, and submission date)

Microelectronics Processing technology Fall Term 2003 Instructions for the mems Lab report Your lab report should follow the format of the IEEE Electron Device Letters. The format from the IC Lab report will be used Contents: Your Letter should include the following sections

In this lab session, the cantilever and fixed-fixed beams will be mechanically tested to determ material and device performance characteristics. The structures will be mechanically loaded the corresponding deflection measured. From the load versus deflection curves, an effective

MEMS LAB SESSION 2 Undercut Silicon Nitride using KOH Etching OVERVIEW OF LAB SESSION: This lab session utilizes potassium hydroxide(koh) wet etching to undercut and release the silicon nitride cantilevers and fixed-fixed beams. In Step

Massachusetts Institute of Technology POLY GATE MOSCAP PROCESS SUMMARY Lab session 1 1. 1 Lab Safety and Cleanroom Orientation 1.2 RCA ( ICL RC 1.3 Gate Oxidation Thermco Atmospheric Furnace(5D-FieldOx

Massachusetts Institute of Technology 3.155J/6.152J Microelectronics Processing technology Fall term 2003 Instructions for the IC lab report Your lab report should follow the format of the IEEE Electron Device Letters. Contents: Your Letter should include the following sections

This lab session will utilize photolithography and dry etching to transfer a pattern from a mask to a substrate. In Step 1. 1, the thickness and the refractive index of the silicon nitride film are measured. In Step