Gas flux across concentration gradient: J=h(Cg-Cs ), Cs=concentration at surface Flux for chemical reaction: J(#/vol s)=k Cs, where k=koexp[-AG/(kBT)I Film growth velos/ hk ii where Nr is number of deposited species/cm Diffusio
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1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition. Referring to information in the class notes and text, answer the following three questions. (Grade will depend more on how you justify your design, rather than on its
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Sputter deposition: Read Plummer Chap 9, Sections 9.2.2.2 to 9.3.10. Consider reading Ohring 1. You need to deposit a high quality (low electrical resistivity) Al film at a very high rate(v> I micron/min) and achieve good step coveage using sputter deposition
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1.(Plummer 10.3)In a certain process, it is desired that the pitch of metal lines be equal to or less than 1.Omm(the pitch equals one metal linewidth plus one spacing between metal lines, measured at top of features). Assume that the metal linewidth and spacing are
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All the questions are from Plummer, Chapter 10, p.679-680, which was handed out in class 1)Question 10.3 2) Question 10.4 3)Question 10.5 4) Question 10.6
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I. Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm< A <500nm. Assume NA=0.26. Recalculate on the same plot for NA=0.41. Discuss the implication of these plots for the technologist that must manufacture transistors with 0.5 um
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1)Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm
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Problem 1 Deal-Grove model states that the thickness of the oxide is related to a time constant r and two constants A and b by the relation
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Solubility limit for P at 1273 K is Co 2 1 x 10 cm\. Intrinsic carrier concentration is 10 cm\. Thus, before including higher order terms, Do=13x10-4 cm2/s. But with first order and second order correction terms
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Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)
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清华大学：《模拟电子技术基础》课程教学资源（PPT课件讲稿）第6讲 放大电路的分析方法《电路》课程电子教案（PPT课件讲稿）第十二章 非正弦周期电流电路高职系列教材：《电视技术》课程电子教案（PPT教学课件）第8章 PAL制解码器《电子工程师手册》学习资料（英文版）ch112 Computer-Aided Control Systems design西安电子科技大学出版社：《信号与线性系统》课程教学资源（PPT课件讲稿）第2章 连续系统的时域分析《电路》课程教学资源（PPT课件讲稿）第4章 电路定理延安大学：《模拟电子技术基础》课程教学资源（第三版，习题解答）第五章 放大电路的频率响应西安电子科技大学：《通信原理》课程教学资源（课件讲稿）第6章 模拟信号的数字传输（2/3）6.3 脉冲编码调制（PCM）《电路》课程教学资源（习题例题）例题讲解_7湘潭大学：《信号与系统》课程教学资源（PPT课件讲稿）第十二章 系统的状态变量分析法海南大学：《通信原理》课程教学资源（PPT课件）第5章 模拟调制系统