Fa|2006 Fundamentals of Semiconductor Physics 万歆 Zhejiang Institute of Modern Physics xinwan@zimpzju.edu.cn http://zimp.zju.edu.cn/xinwan/
Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Fall 2006
Five-Point plan for success e Pursue your passions e Venture where you have never ventured before e Pace yourself e Serve others e Have lots of fun Princeton President Shirley M. tilghman
Five-Point Plan for Success ☺ Pursue your passions ☺ Venture where you have never ventured before ☺ Pace yourself ☺ Serve others ☺ Have lots of fun -- Princeton President Shirley M. Tilghman
Chapter 2. Silicon Technology TWo foundations of successful engineering Mastery of physics concepts Perfect technology -means to transfer concepts into usefu structures Total 3 hours
Chapter 2. Silicon Technology Two foundations of successful engineering: – Mastery of physics concepts – Perfect technology – means to transfer concepts into useful structures. Total 3 hours
IC card 游 杭州 HANG ZHOU CPU EEPROM 64kb ROMIRAM
IC Card
Si Ge& GaAs Technological evolution began with gemanium in 1940s Band gap e =0.67eV At 300 K, intrinsic carrier density n; =2.5 x 1013 cm-3 n; arises fast with T, due to sm-ig1015 cm-3 at 400 K Device not useful when intrinsic carrier concentration is comparable to dopant density Research efforts shifted to silicon(Ea=1.12 ev) and GaAs(ea=1.42 e) in 1950s
Si, Ge & GaAs • Technological evolution began with gemanium in 1940s. – Band gap Eg = 0.67 eV – At 300 K, intrinsic carrier density ni = 2.5 x 1013 cm-3 – ni arises fast with T, due to small Eg – ~1015 cm-3 at 400 K – Device not useful when intrinsic carrier concentration is comparable to dopant density. • Research efforts shifted to silicon (Eg = 1.12 eV) and GaAs (Eg = 1.42 eV) in 1950s