Open-Circuit Condition of a pn Junction Diode Depletion region n-type Si Metal contact ++ node ++ Cathode 十+++→;十; ++ +十→}十 Potentia hill Charge distribution of barrier voltage 0 B across a pn Junction voltage 半导体制造技术 电信学院微电子教研室 by Michael Quirk and Julian Serda Figure 3.6
半导体制造技术 电信学院微电子教研室 by Michael Quirk and Julian Serda Open-Circuit Condition of a pn Junction Diode p-type Si } n-type Si Depletion region Anode Cathode Metal contact Potential hill 0 Barrier voltage Charge distribution of barrier voltage across a pn Junction. Figure 3.6
Reverse-Biased Pn Junction Diode Open-circuit condition 十十十十← ++ ++ 十十十 Lamp 半导体制造技术 by Michael Quirk and Julian Serda Figure 3.7 电信学院微电子教研室
半导体制造技术 电信学院微电子教研室 by Michael Quirk and Julian Serda p n 3 V Lamp Open-circuit condition (high resistance) Reverse-Biased PN Junction Diode Figure 3.7
Forward-Biased pn junction Diode ++ 十 ++ ++ ++ Hole flow Electron flow ------→ Lamp 半导体制造技术 by Michael Quirk and Julian Serda Figure 3.8 电信学院微电子教研室
半导体制造技术 电信学院微电子教研室 by Michael Quirk and Julian Serda Forward-Biased PN Junction Diode p n 3 V Hole flow Electron flow Lamp Figure 3.8
Forward and reverse electrical Characteristics of a silicon Diode Forward bias curve 12010080604020 Junction voltage 8121.6 Breakdown current voltage Reverse bias curve 半导体制造技术 by Michael Quirk and Julian Serda Figure 3.9 电信学院微电子教研室
半导体制造技术 电信学院微电子教研室 by Michael Quirk and Julian Serda Forward and Reverse Electrical Characteristics of a Silicon Diode 120 100 80 60 40 20 .4 .8 1.2 1.6 + I - V + V - I Breakdown voltage Leakage current Reverse bias curve Forward bias curve Junction voltage Figure 3.9