CPU 05510 Intel 0.13um Pentium IV AMD 1.4GHz Athlon PC CPU Tualatin PDF文件使用"pdfFactory”试用版本创建ft.fineprint.cn
Intel 0.13mm Pentium IV Tualatin AMD 1.4GHz Athlon PC CPU CPU PDF 文件使用 "pdfFactory" 试用版本创建 Ìwww.fineprint.cn f Ì
Cross Section of Simplified Cu/Low-k Device Protective Oxide or Oxy-nitride Cu Mtop W Mtop-1 Low-k Mtop-2 Sio2 Intermediate-k Silicon ∽ test PDF文件使用"pdfFactory”试用版本创建挂w,fineprint.cn
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Porous lo thin films As the feature size in Si-based integrated circuits has been reduced below the sub-micron level,the inherent interconnect RC (wire resistance R and capacitance C)time delay has become the major factor limiting the improvement in device speed. Copper has replaced aluminum in interconnect conducting lines. Low dielectric constant (k)materials are being intensively investigated as a replacement for silicon dioxide (k~4.0). PDF文件使用"pdfFactory”试用版本创建l.fineprint.cn
Porous low-k thin films l As the feature size in Si-based integrated circuits has been reduced below the sub-micron level, the inherent interconnect RC (wire resistance R and capacitance C) time delay has become the major factor limiting the improvement in device speed. l Copper has replaced aluminum in interconnect conducting lines. l Low dielectric constant (k) materials are being intensively investigated as a replacement for silicon dioxide (k ~ 4.0). PDF 文件使用 "pdfFactory" 试用版本创建 Ìwww.fineprint.cn ÿÌ
3.0HTRS2002 2.5 2.0 1.5 1.0 2002 2010 Year PDF文件使用"pdfFactory”试用版本创建w.fineprint.cn
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MOVING FORWARD...TO WHAT 0.13μm 90 nm 65 nm 45 nm 32 nm Time 1999V53nm 2001V37m 2004V 25 nm 2007V 18 nm 2010N13m Cu/FSG Sif。 ITRS roadmap SiN k 7 Cu/SiLK ULK materials Low K barriers k=33-3.7 Cu/SiOC SiC (N)k~4.5-5 Cu porous SiLK k=3.0 Cu/porous SiOC S7C-0,2?k<4.5 Cu /air gap k=2.5 SiC-X??k<3.5 k=2.0-2.2 Cu k<2 Optical Interconnects PDF文件使用"pdfFactory”试用版本创建w.fineprint.cn
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