《电力电子技术》课程教学课件（PPT讲稿）Topic 03 MOSFET and IGBT • Turn-on and turn-off transitions of power devices • Switching loss and power loss of power devices • New devices and other means for lowering loss

.On-state resistance increases rapidly with rated blockingvoltage, used in low-voltage applications (Usually used atvoltageslessthan600V)2.5to2.7Rps(on)DSS·On-state resistance has a positive temperaturecoefficient (On-state resistance goes up with the junctiontemperature within thedevice),thereforeeasily paralleledRDS(120 °c)=2RpS(25 ° C)16

•On-state resistance increases rapidly with rated blocking voltage, used in low-voltage applications (Usually used at voltages less than 600V ). 16 •On-state resistance has a positive temperature coefficient (On-state resistance goes up with the junction temperature within the device ) , therefore easily paralleled. RDS(120 °C )=2RDS(25 °C )

Parallelingof MOSFETsDORdMOSFETscanbeeasilyparalleled because ofO-positive temperatureGcoefficient of rDS(on).OsPositive temperaturecoefficientleads to thermalstabilizationeffect.? If rDS(on)1 > rDS(on)2 then more current and thushigherpowerdissipation inQ2.Temperatureof Q2thus increasesmorethantemperature of Q1 and rDs(on) values become17equalized

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1.3.5Features and applications of power MOSFETZRF54ON80F22UnipolardeviceVoltage-driven device, easy to control by the gate ,high impedance gate which requires a small currentand charge to facilitate on/off transition.fast switching speed, used in high operatingfrequency (could be hundreds of kHz) applications

1.3.5 Features and applications of power MOSFET •Voltage-driven device, easy to control by the gate , high impedance gate which requires a small current and charge to facilitate on/off transition. •fast switching speed, used in high operating frequency (could be hundreds of kHz) applications. • Unipolar device

1.4 IGBTIGBT = Insulated Gate Bipolar TransistorCombine of BJT and MOS in DarlingtonVCEconfigurationGGate drive (voltage drive)VGEIGBTEPT.NPT,SPTCell&LayoutVLD,GRingsRB,RCDrain/CollectorForanIGBTPSGgateoxideSiNSIPOSGafepAlpolySomreeEmifterAlTiNiAg

• IGBT = Insulated Gate Bipolar Transistor • Combine of BJT and MOS in Darlington configuration • Gate drive (voltage drive) IGBT VGE G E C VCE 1.4 IGBT

NSnBARCHOUnitmmDCBRECCE马

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