Topic 3Main contentsLast lecture reviewMOSFET and IGBTTurn-on and turn-off transitions of power devicesSwitching loss and power loss of power devicesNew devices and other means for lowering loss
Main contents • Last lecture review • MOSFET and IGBT • Turn-on and turn-off transitions of power devices • Switching loss and power loss of power devices • New devices and other means for lowering loss Topic 3
1PowerDevices(1) Uncontrollable Devices (No signal for both turn-on & turn-off)K4Power Diode(2)ControllableDevices(Signalforboth turn-on&turn-off)*BJTVDMOSFIGBTGTO (IGCT)-(3)Semi-controllable Devices (Signal for turn-on, no signal for turn-off)1KThyristor,orSCRC
1 Power Devices (1) Uncontrollable Devices (No signal for both turn-on & turn-off) (2) Controllable Devices (Signal for both turn-on & turn-off) Power Diode A K C E B A G K C VDMOS IGBT G E BJT GTO (IGCT) (3)Semi-controllable Devices (Signal for turn-on, no signal for turn-off ) Thyristor, or SCR K
1.1 DiodeKAiDiDiDVratedKAC文OUD-UD00Vp(1)+UDReverse(a)blockingregionSymbol of diode(b)(c)i-vcharacteristicidealizedcharacteristic
1.1 Diode A K Symbol of diode i-v characteristic idealized characteristic
AMainparametersforapplicationVRRMa.b.IF上海三品平导体有限公司北MDC55A1600VFC.d.trr or Qm200WWchinacrRthe.公司0710-3086888-X02
A K Main parameters for application - a. VRRM b. IF c. VF d. trr or Qrr e. Rth
1.2 ThyristorAGA阳极A0三个KP1PN概层半导结NIOGP2-体门极N2K《阴极?
G 门极 K 阴极 A 阳极 P1 P2 N1 N2 四层半导体 三个PN结 K A G A 1.2 Thyristor