(2) Soft switching techniques to lower switching(transition) loss(a) Hard switching(b)Pseudo softswitching(c)Zerovoltageswitching(ZVS)(e)ZVZCS(d)Zerocurrentswitching(ZCS)
(2) Soft switching techniques to lower switching(transition) loss (a) Hard switching (b) Pseudo soft switching (c) Zero voltage switching(ZVS) (d) Zero current switching(ZCS) (e) ZVZCS
SiC=Silicon（Si)+Carbon（C)Si-IGBTSi-IGBT&&Sic4,1SiSicSi-DiodeSiC-DiodeSwitch3,22.4Recovery1,5losses1,130%0.25Turn-offLoss reductionbandgapbreakdownfieldthermallosses(eV)(MV/cm)conductivity80%(W/cmk)Turn-onUpto 8o%lowerswitchinglosseslossesIGBTI1(t)个MOSFETsicSiC-basedDeviceshasbettercharacteristicsthanSiDevices12
SiC-based Devices has better characteristics than Si Devices 12
12020SiCMOS.175C.120Ohm,40AIGBT175C.15Ohm,40A15100haw.wmaenne80hym10605pronounced tailphase inIGBT4002屏尊载图Ctrl+Alt+A载国时隐薇当前菌口0-10A00.610.20.40.81.21.4Timeinμs13
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KnownFullSiCmodules-July20171000ROHM福900Powerex/MistubishioWolfspeed800SemikronFuji Electric700VincotecheMicroSemi600OGEGlobalpowertechnologiesGroup500OIXYS?Infineon400003002000Qe10020020040080010001400160060012001800Voltage(V)14
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SiC device market size splitbyapplication (Ms)$I200MIncludethediode-40%CAGR2020-2022discrete,diode inSI000M-hybridmoduleJYOLE$800MDivelsppemesttransistor discreteand full SiC module$600MCAGR2016-2020:28%$400M$200MSM2016201720182019202020212022CAGR16-22$248M$280M$333M$407M$555M$802MSI083M28%Total9%Others (Oil&Gas,Millitary.Medical,R&D...)$22M$25M$27M$29M$31M$34M$37M25%UPSS18M$20M$23M$28M$38M$50M$69M$23M$32MS43M$63M593M$132M41%MotorDrive (including air conditioning)$17MPV$131M28%S71M$85MS108M$169M$238M$308MSIM517M$49M$2M$6M$.83M$117M135%xEVChargingintfrastructureWindSOM$OM$OMSIM$2M510M$24M$5M$7MSIIMSI7M$34M$82M$146M75%xEV (including on-boird charger)$117M$131M8%PFC/powersupplySIlIM$123M$148M$160M$172M$3M$79M75%$3M$4M$10M$23M$52MRail (includingauxiallarypower)15
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