Chapter 5Field-Effect Transistors (FETs)2025/11/27
2025/11/27 Chapter 5 Field-Effect Transistors (FETs)
Content· Physical operation and current-voltagecharacteristicsDCanalysisBiasing in MOS amplifier circuit and basicconfiguration2025/11/27
2025/11/27 2 Content ⚫ Physical operation and current-voltage characteristics ⚫ DC analysis ⚫ Biasing in MOS amplifier circuit and basic configuration
Physical operation andcurrent -voltage characteristics2025/11/27?
2025/11/27 3 Physical operation and current -voltage characteristics
Introductionto FETFET: Field Effect TransistorThere are two types>MOSFET:metal-oxide-semiconductorFET> JFET:Junction FETMOSFET is also called the insulated-gate FET orIGFET.(inteD>Quite smallCore2Extremequad-core> Simple manufacturingprocess>Lowpowerconsumption> Widely used in VLSI circuits(>800 million on a single IC chip)2025/11/27
2025/11/27 4 ⚫ FET: Field Effect Transistor ⚫ There are two types ➢ MOSFET: metal-oxide-semiconductor FET ➢ JFET: Junction FET ⚫ MOSFET is also called the insulated-gate FET or IGFET. ➢ Quite small ➢ Simple manufacturing process ➢ Low power consumption ➢ Widely used in VLSI circuits(>800 million on a single IC chip) Introduction to FET
5DevicestructureofMOSFET (n-type)Gate(G)Source(S)Drain(D)OxideQ.9(Si02)MetalEHHHEntntChannelareap-typeSemiconductorSubstrate(Body) Body(B)For normal operation, it is needed to create aconducting channel between Source and Drain2025/11/27
2025/11/27 5 Device structure of MOSFET (n-type) p-type Semiconductor Substrate (Body) Body(B) n + n + Oxide (SiO2 ) Source(S) Gate(G) Drain(D) Metal ⚫ For normal operation, it is needed to create a conducting channel between Source and Drain Channel area