Thin Film Deposition E| electroplating电镀: Use wet chemicals and electric current to transfer copper ions(as well as other metals) from a target to the wafer surface An Electroplating system includes the following: Chemical bath, containing CuSO 4 Source of pulsed dc current Copper target (anode) Electroplating is used for coating the wafer backside with metal for packaging depositing copper for damascene interconnects or copper plugs zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • Electroplating电镀: – Use wet chemicals and electric current to transfer copper ions (as well as other metals) from a target to the wafer surface • An Electroplating system includes the following: – Chemical bath, containing CuSO4 – Source of pulsed DC current – Copper target (anode) • Electroplating is used for: – coating the wafer backside with metal for packaging – depositing copper for damascene interconnects or copper plugs
Thin Film Deposition Electroplating: wafer is connected Cu Cuo to minus side of Copper ions Electrons Copper metal power supply -copper target is connected to plus side Cathode copper ions Outlet Outlet Copper atom O Substrate released from the attached to wafer target are attracted ▲ Plating solutio to the wafer copper ions are neutralized by electrons from Copper anode power supply zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • Electroplating: –wafer is connected to minus side of power supply –copper target is connected to plus side –copper ions released from the target are attracted to the wafer –copper ions are neutralized by electrons from power supply
Thin Film Deposition Electroplating has been used for many years in other industries, but is only recently being used in IC industry Advantages: Inexpensive no vacuum required multiple wafers can be processed simultaneously deposition rate is increased by increasing current Disadvantages difficult to control for filling high aspect- ratio(深宽比) features an alternating voltage waveform is used to create a dep-etch process that improves gap fill zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • Electroplating: – has been used for many years in other industries, but is only recently being used in IC industry • Advantages: – inexpensive – no vacuum required – multiple wafers can be processed simultaneously – deposition rate is increased by increasing current • Disadvantages – difficult to control for filling high aspect-ratio(深宽比) features • an alternating voltage waveform is used to create a dep-etch process that improves gap fill
溶胶凝胶法(sol-gel) ·首先根据要做的薄膜的厚度要求适当控制溶 胶的粘度,然后,采用甩胶法、喷涂法等将 溶胶涂在基片表面,在经过放置、干燥及热 处理等工艺,形成凝胶薄膜。 溶胶-凝胶法不需要苛刻的工艺条件和复杂的 设备,可以在大面积和复杂形状的玻璃、金 属或者塑料上镀膜 主要的应用有:制作保护膜、吸收膜、增反 膜、增透膜、波导结构等。 zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 溶胶-凝胶法 （sol-gel） • 首先根据要做的薄膜的厚度要求适当控制溶 胶的粘度，然后，采用甩胶法、喷涂法等将 溶胶涂在基片表面，在经过放置、干燥及热 处理等工艺，形成凝胶薄膜。 • 溶胶-凝胶法不需要苛刻的工艺条件和复杂的 设备，可以在大面积和复杂形状的玻璃、金 属或者塑料上镀膜。 • 主要的应用有：制作保护膜、吸收膜、增反 膜、增透膜、波导结构等
原子层化学气相淀积 ALE: Atomic layer Epitaxy ALD: Atomic Layer deposition ALCVD: Atomic Layer Chemical Vapor deposition MLE: Molecular Layer Deposition zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 原子层化学气相淀积 • ALE: Atomic layer Epitaxy • ALD: Atomic Layer Deposition • ALCVD: Atomic Layer Chemical Vapor Deposition • MLE: Molecular Layer Deposition