3氧化反应沉积 些元素的氢化物或有机烷基化合物,如果通以氧气,在反应 器中发生氧化反应可以沉积出相应的氧化物薄膜。如: SIH4+20,325475SiO,+2H,O 化学合成反应沉积 由两种或两种以上的反应源材料在沉积反应器中通过合成反应 得到所需要的薄膜。如: 3SiH4 +4 NH3 850℃ Si3N4+12H2 5化学输运反应沉积 把需要沉积的源材料与适当的气体介质(称为输运剂)发生化学 反应,并形成一种气态化合物,然后将其输运到与源区不同的反 应室,再发生逆向反应,生成源材料而沉积在基片上。如: 2ZnS(源材料)+2L2(输运剂)→2Zm2+S2 zhang@fudan.edu.cnyiC学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 3 氧化反应沉积. 一些元素的氢化物或有机烷基化合物，如果通以氧气，在反应 器中发生氧化反应可以沉积出相应的氧化物薄膜。如： SiH4 +2O2 325~475℃ SiO2+2H2O 4 化学合成反应沉积. 由两种或两种以上的反应源材料在沉积反应器中通过合成反应 得到所需要的薄膜。如： 3SiH4 +4 NH3 850℃ Si3N4+12H2 5 化学输运反应沉积. 把需要沉积的源材料与适当的气体介质（称为输运剂）发生化学 反应，并形成一种气态化合物，然后将其输运到与源区不同的反 应室，再发生逆向反应，生成源材料而沉积在基片上。如： 2ZnS(源材料) +2 I2 （输运剂） x℃ 2ZnI2+S2 y℃
Thin Film Deposition Physical Vapor Deposition(PVD)- Sputtering溅射: Use plasma energy to blast small fragments from a target. Purely physical process, no chemical reaction occurs Reverse of physical etching(sputter etch), used at the beginning of the sputter process to remove native oxides. Where is Sputtering Used? Because it is a physical process, almost any material can be sputtered (CvD is limited to materials that can be chemically created). In semiconductor processing, sputtering is most often used to deposit metal Interconnect Layers: Aluminum and its alloys aisi and alcu and Barrier layers: Barrier metals: Ti, TiN, TiW, and w zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • Physical Vapor Deposition (PVD) – Sputtering溅射: – Use plasma energy to blast small fragments from a target. – Purely physical process, no chemical reaction occurs. – Reverse of physical etching (sputter etch), used at the beginning of the sputter process to remove native oxides. • Where is Sputtering Used? – Because it is a physical process, almost any material can be sputtered (CVD is limited to materials that can be chemically created). – In semiconductor processing, sputtering is most often used to deposit metal Interconnect Layers: • Aluminum and its alloys (AlSi and AlCu) – and Barrier Layers: • Barrier metals: Ti, TiN, TiW, and W
Thin Film deposition Sputtering Positive ions bombard the negative cathode or target The energy of the ion is transferred to the target, knocking off surface atoms Positive lon(AI Sputtered Species 溅射镀膜是指粒子经电场加速后轰击阴极靶材,通过动量转换 将靶材中的原子或分子击出靶材表面(称为溅射),然后这些被 溅射出来的原子或分子携带着从靶材中击出时的能量沉积在阳极 基片表面形成薄膜。 zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • Sputtering: – Positive ions bombard the negative cathode or target – The energy of the ion is transferred to the target, knocking off surface atoms. Sputtered Species Positive Ion (Ar+) + 溅射镀膜是指粒子经电场加速后轰击阴极靶材，通过动量转换， 将靶材中的原子或分子击出靶材表面（称为溅射），然后这些被 溅射出来的原子或分子携带着从靶材中击出时的能量沉积在阳极 基片表面形成薄膜
Thin Film Deposition A Sputtering system includes the following High vacuum chamber and high vacuum components(< 1x10-5 torr) Target (consists of material to be deposited) Inert (Argon) gas delivery RF (or DC)Power ow-temperature(-2000C)wafer heater to increase adhesion zhang@fudan.edu.cn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • A Sputtering system includes the following: – High vacuum chamber and high vacuum components (< 1x10-5 torr) – Target (consists of material to be deposited) – Inert (Argon) gas delivery – RF (or DC) Power – Low-temperature (~2000C) wafer heater to increase adhesion
Thin Film Deposition A Single Wafer Sputtering System o'o o ducn复旦大学张荣君
rjzhang@fudan.edu.cn 复旦大学 张荣君 Thin Film Deposition • A Single Wafer Sputtering System