Why spend a whole lecture on oxidation of Si? Ge has high ue, Wh, Ge stable but no oxide GaAs has high ue and direct band Why sio? Sio, is stable down to 10 9 Torr. T>900C Sio can be etched with hf which leaves si unaffected

Processes: gift of Slo2-Expose Si to steam = uniform insulating layer or metal film growth: high vacuum, single element Contrast with CVD: toxic, corrosive gas flowing through valves

What does Materials Science have to do with Microelectronic Processing? Need to understand DIfferences: metals, oxides and semiconductors Atomic bonding Oxidation rates

What does Materials Science have to do with Microelectronic Processing? Need to understand DIfferences: metals, oxides and semiconductors Atomic bonding Oxidation rates, compound formation(GaAs)

第一章激光概述 为使读者对激光及其应用有一正确概念,首先概括地介绍一些有关的基本事项。 1-1激光束的特征 一、普通光源的光 来自某光源的光是从构成该光源的为数极多的原子或分子发射的光波合成的。各个原子从能量较高状态即激发态跃迁到能量较低的状态时,将能量差以光的形式放出来(图1.1)

第一节数据交换的必要性 第二节利用公用网进行数据交换 第三节电路交换方式 第四节报文交换方式 第五节分组交换方式 第六节交换方式的选择与比较退出

第一节物理层接口 第二节数据传输控制规程 第三节传输控制规程比较

第一节分组长度选取的原则 第二节分组的传输 第三节分组的路由选择 第四节分组网的流量控制 第五节分组网的编号规则 第六节分组网的计费原则 第七节网际互连 第八节用户终端与分组网的互连

Man-Machine Systems 105.2 Several Natures of Man-Machine Control-A Catalog of Behavioral Complexities 105.3 Full-Attention Compensatory Operations--The Crossover model Crossover Frequency for Full-Attention Operations. Remnant Duane Mcruer Effects of Changes in the Task Variables. Effects of Divided 105.1 Introduction

Marel Corporation Robert Joel Barnett Vanderbilt University Industrial Systems Alan K.Wallace Oregon State University Rene Spee 104.1 Welding and Bonding Oregon State University Control System Requirements. System Parameters. Welding Mario Sznaier