查询LF353供应商 National December 2003 Semiconductor LF353 三 Wide Bandwidth Dual JFET Input Operational Amplifier 0 General Description Features These devices are low cost, high speed, dual JFET input Internally trimmed offset voltag operational amplifiers with an internally trimmed input offset Low input bias current voltage(Bl-FET Il technology). They require low supply Low input noise voltage 25 nV/Hz 0.01 pA/vHz slew rate. In addition, well matched high voltage JFET input a Wide gain bandwidth 4 MHZ devices provide very low input bias and offset currents. The High slew rate 13 V/H designers to immediately upgrade the overall performance of w supply current: xisting LM1558 and 8 designs ■ High input impedance fiers may ≤0.02% speed integrators, fast D/A converters, sample and hold Low 1/t noise corner: circuits and many other circuits requiring low input offset Fast settling time to o.01% voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The devices also exhibit low noise and offset voltage drift. Typical Connection Connection Diagram Dual-n-Line Package UTPUT A INVERTING INPUT A OUTPUT B NON-INVERTING Top View Order Number LF353M. LF353MX or LF353N Simplified schematic See NS Package Number MOBA or NO8E 1/2 Dual ITERNALLY TAIMMED 0064916 BH-FET ll" is a trademark of National Semiconductor Corporation. @2003 National Semiconductor Corporation DS005649 www.nationalcom
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II™ technology). They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF353 is pin compatible with the standard LM1558 allowing designers to immediately upgrade the overall performance of existing LM1558 and LM358 designs. These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth. The devices also exhibit low noise and offset voltage drift. Features n Internally trimmed offset voltage: 10 mV n Low input bias current: 50pA n Low input noise voltage: 25 nV/√Hz n Low input noise current: 0.01 pA/√Hz n Wide gain bandwidth: 4 MHz n High slew rate: 13 V/µs n Low supply current: 3.6 mA n High input impedance: 1012Ω n Low total harmonic distortion : ≤0.02% n Low 1/f noise corner: 50 Hz n Fast settling time to 0.01%: 2 µs Typical Connection 00564914 Simplified Schematic 1/2 Dual 00564916 Connection Diagram Dual-In-Line Package 00564917 Top View Order Number LF353M, LF353MX or LF353N See NS Package Number M08A or N08E BI-FET II™ is a trademark of National Semiconductor Corporation. December 2003 LF353 Wide Bandwidth Dual JFET Input Operational Amplifier © 2003 National Semiconductor Corporation DS005649 www.national.com 查询LF353供应商
4/ Absolute Maximum Ratings(Note 1) Small Outline Package If Military/Aerospace specified devices are required Vapor Phase(60 sec.) 215"c please contact the National Semiconductor Sales Office/ Infrared (15 se 220c Distributors for availability and specifications. See AN-450"Surface Mounting Methods and Their Effect ±18V on Product Reliability for other methods of soldering (Note 2 surface mount devices Operating Temperature Range o°cto+70'C ESD Tolerance( Note 8) 150°C HJA M Package Differential Input Voltage Note 1: mum Ratings indicate limits beyond which damage Input Voltage Range( Note 3) Output Short Circuit Duration ite DC and AC electrcal specifications under part Storage Temperature Range -65cto+150C Lead Temp. (Soldering, 10 sec. ting Ratings. Specifications are not guar- anteed for parameters where no limit is given, however, the typical value is a dering Information good indication of device performance. Dual-In-Line Package Soldering(10 sec. 260c DC Electrical Characteristics (Note 5) Parameter Conditions LF353 yp Input Offset Voltage Rs=10KQ,TA=25'C 5 Over Temperature 13 △Vos△T| Average TC of Input Offset Voltage s=10k2 T=25 C,(Notes 5, 6) T≤70c Input Bias Current =25c,( Notes5,6) T≤70c 8 DA Large Signal Voltage Gain vs=±15V,TA=250 Vo=±10V,RL=2k Over Temperature Output Voltage Swing Vs=±15v,R1=10k ±12±135 Input Common-Mode Voltage Vs=±15V 15 CMRRCommon-Mode Rejection Ratio Rs≤10kg 70 100 PSRR Supply Voltage Rejection Ratio (Note 7) 0 Supply Current AC Electrical Characteristics Symbol Parameter LF353 Units Max Amplifier to Amplifier Coupling TA=25℃,f=1Hz-20kHz (Input Referred) s=±15V,TA=25C h Pr =25 Equivalent Input Noise Voltage TA=25C,Rs=1009 nv/、Hz f=1000Hz Equivalent Input Noise Current T=25C,f=1000Hz 0.01 www.national.com
Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage ±18V Power Dissipation (Note 2) Operating Temperature Range 0˚C to +70˚C Tj (MAX) 150˚C Differential Input Voltage ±30V Input Voltage Range (Note 3) ±15V Output Short Circuit Duration Continuous Storage Temperature Range −65˚C to +150˚C Lead Temp. (Soldering, 10 sec.) 260˚C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260˚C Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD Tolerance (Note 8) 1000V θJA M Package TBD Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. DC Electrical Characteristics (Note 5) Symbol Parameter Conditions LF353 Units MIn Typ Max VOS Input Offset Voltage RS=10kΩ, TA=25˚C 5 10 mV Over Temperature 13 mV ∆VOS/∆T Average TC of Input Offset Voltage RS=10 kΩ 10 µV/˚C IOS Input Offset Current Tj =25˚C, (Notes 5, 6) 25 100 pA Tj ≤70˚C 4 nA IB Input Bias Current Tj =25˚C, (Notes 5, 6) 50 200 pA Tj ≤70˚C 8 nA RIN Input Resistance Tj =25˚C 1012 Ω AVOL Large Signal Voltage Gain VS=±15V, TA=25˚C 25 100 V/mV VO=±10V, RL=2 kΩ Over Temperature 15 V/mV VO Output Voltage Swing VS=±15V, RL=10kΩ ±12 ±13.5 V VCM Input Common-Mode Voltage VS=±15V ±11 +15 V Range −12 V CMRR Common-Mode Rejection Ratio RS≤ 10kΩ 70 100 dB PSRR Supply Voltage Rejection Ratio (Note 7) 70 100 dB IS Supply Current 3.6 6.5 mA AC Electrical Characteristics (Note 5) Symbol Parameter Conditions LF353 Units Min Typ Max Amplifier to Amplifier Coupling TA=25˚C, f=1 Hz−20 kHz −120 dB (Input Referred) SR Slew Rate VS=±15V, TA=25˚C 8.0 13 V/µs GBW Gain Bandwidth Product VS=±15V, TA=25˚C 2.7 4 MHz en Equivalent Input Noise Voltage TA=25˚C, RS=100Ω, 16 f=1000 Hz in Equivalent Input Noise Current Tj =25˚C, f=1000 Hz 0.01 LF353 www.national.com 2
AC Electrical Characteristics ( Continued) (Note 5) Symbol Conditions LF353 MinTypMax THD Total Harmonic Distortion Av=+10,RL=10k <0.02 BW=20 Hz-20 kHz ed temperatures, the device must be derated based on a thermal resistance of 115 C/ typ junction to ambient for the N package. and 158 C/ typ junction to ambient for the H package. Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 4: The power dissipation limit, however, can production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the an emperature as a result of intemal power dissipation, PD- TFTA+A PD where BA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum ote 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. vs =±6Vto±15V Note 8: Human body model, 1.5 k]2 in series with 100 pF. Typical Performance Characteristics Input Bias Current Input Bias Current 80 COMMON-MODE VOLTAGE (V) TEMPERATURE C) Supply Current Positive Common-Mode Input Voltage Limit 0°≤TA≤+70° c≤TA≤+70 28 POSITIVE SUPPLY VOLTAGE (V) SUPPLY VOLTAGE(±v)
AC Electrical Characteristics (Continued) (Note 5) Symbol Parameter Conditions LF353 Units Min Typ Max THD Total Harmonic Distortion AV=+10, RL=10k, VO=20Vp−p, BW=20 Hz-20 kHz <0.02 % Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package, and 158˚C/W typ junction to ambient for the H package. Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 4: The power dissipation limit, however, cannot be exceeded. Note 5: These specifications apply for VS=±15V and 0˚C≤TA≤+70˚C. VOS, IBand IOS are measured at VCM=0. Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj . Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj =TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum. Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS = ±6V to ±15V. Note 8: Human body model, 1.5 kΩ in series with 100 pF. Typical Performance Characteristics Input Bias Current Input Bias Current 00564918 00564919 Supply Current Positive Common-Mode Input Voltage Limit 00564920 00564921 LF353 3 www.national.com
E Typical Performance Characteristics (Continued) Negative Common-Mode Input Voltage Limit Positive current limit 0c≤TA≤+70 三 u2ouz 9 3=au>a NEGATIVE SUPPLY VOLTAGE (V) OUTPUT SOURCE CURRENT (mA) Negative Current Limit Voltage Swing -15 2>u2z TA="C 2=9 OUTPUT SINK CURRENT (mA) SUPPLY VOLTAGE (+V) s64925 Output Voltage Swing Gain Bandwidth TA= 25C 45 2是> CL-100 pF 0203040506070 RL-OUTPUT LOAD (ks2 TEMPERATURE (C) cs64927 www.national.com
Typical Performance Characteristics (Continued) Negative Common-Mode Input Voltage Limit Positive Current Limit 00564922 00564923 Negative Current Limit Voltage Swing 00564924 00564925 Output Voltage Swing Gain Bandwidth 00564926 00564927 LF353 www.national.com 4
Typical Performance Characteristics (Continued) Bode plot Slew Rate PHASE 0京 RISING FREQUENCY(MHz) TEMPERATURE ( C) Distortion vS Frequency Undistorted Output Voltage Swing 0175TA=5c Vo=20 V Av=100 0.075 >3 FREQUENCY(Hz) FREQUENCY(H Open Loop Frequency Response Common-Mode Rejection Ratio 它100 TA=25°C +OPEN LOOP 当20 VOLTAGE GAIN 101001k10k100k1M10M 101001k10k100k1M10M FREQUENCY(Hz) FREQUENCY(Hz) 5
Typical Performance Characteristics (Continued) Bode Plot Slew Rate 00564928 00564929 Distortion vs. Frequency Undistorted Output Voltage Swing 00564930 00564931 Open Loop Frequency Response Common-Mode Rejection Ratio 00564932 00564933 LF353 5 www.national.com