The W cVDletch-back process 锦作次官推边特联连滑楼会配站 这样省类宁刻平艺莞尘填满浅战若部分充深孔 T Substrate plug wcvD blanket etchback deposition Schematic of the W cvD/etchback process to form a w plug in ntegrated circuits
The W CVD/etch-back process: 钨通常作为一种非选择性薄膜进行沉积，而且经过背刻蚀后 产生一个钨插头。在将来，会采用化学机械抛光法代替刻 蚀，以满足严格的平面需求。选择性填充孔也是一个办法， 这样省去了刻蚀工艺。完全填满浅孔或者部分填充深孔
选择性填充( selectively filling)触点和通 路孔( contact or via holes是代替背刻蚀 的一种选择,通过完全填充浅的通路孔 vias)和部分填充较深的通路孔可以避免对 背刻蚀的需要
选择性填充（selectively filling）触点和通 路孔(contact or via holes)是代替背刻蚀 的一种选择，通过完全填充浅的通路孔 (vias)和部分填充较深的通路孔可以避免对 背刻蚀的需要
作为CVD前驱体的卤化钨( Tungsten halides as CVD precursors 应化WF6 WcIs and wBr易于合成易于得到且具有足够高的蒸 气压用于WcVD。其结构和性能如下: X 6 X X= F CL Br, CO X Figure 5. 17 Tungsten halides(WX,)and w(CO), have an octahedral structure TABLE 5.3 Melting point Boiling point Vapor pressure Decomp. temp. Compound Torr/°C C WE 2.0 17 889/21 >750 wCIs 275 346 7/200 =600 WBrs 232 decomp. 600
作为CVD前驱体的卤化钨(Tungsten halides as CVD precursors) 卤化钨(WF6 , WCl6 and WBr6 )易于合成、易于得到且具有足够高的蒸 气压用于W CVD。其结构和性能如下：
Most commonly used methods of W cvD Precursor reduction agent WE H2 Si WF6 SiH 4 WF6 is a gas at room temperature( 1000 torr vapor pressure at 25C), and this is an important advantage over other tungsten CVD precursors since it greatly facilitates the precursor transport into the processing chamber and provides the potential of high deposition rates
Most commonly used methods of W CVD: Precursor + reduction agent WF6 H2 WF6 Si WF6 SiH4 WF6 is a gas at room temperature (1000 torr vapor pressure at 25 ℃), and this is an important advantage over other tungsten CVD precursors since it greatly facilitates the precursor transport into the processing chamber and provides the potential of high deposition rates
WF6+H2 Blanket tungsten CVD: Temperature: 300-800oC The overall reaction is described by VFsla+ 3H WI 6(g) 2 6HF 这是一个吸热反应,△H21ka1/mol,但是沉积可以发生, 因为反应的熵增大。同时CW反应的本质也不是平衡反应。 Selective tungsten CVD for applications in integrated-circuit technology Low pressure 0.1-10 torr Low temperature 300 -500C Apparent activation energy about 16kcallmol; growth rate a P(H2 )12P(WF )0 氢气过量,低压条件
WF6 + H2 Blanket tungsten CVD: Temperature: 300~800℃ The overall reaction is described by: WF6(g) + 3H2 W(s) + 6HF(g) 这是一个吸热反应，ΔH=21kcal/mol，但是沉积可以发生， 因为反应的熵增大。同时CVD反应的本质也不是平衡反应。 Selective tungsten CVD : for applications in integrated-circuit technology Low pressure 0.1~10 torr; Low temperature 300~500 ℃; Apparent activation energy about 16kcal/mol; growth rate ∝ P(H2 ) 1/2P(WF6 ) 0 氢气过量，低压条件