CondensationLiquid N,ScraperMainvacuumchamberGas inletEvaporationsourcesFunnelLowpressureTopumpunitPlungerBellowsAnvilSliderHighpressureFourreauunitPlungerLemateriauprecurseurevaporesecondenseaucontactd'ungazinertedehautepurete.Ilesttransporteparconvectionversundoigtrefroidia'azote liquide.Le materiaupulverulent est detache,collecte,pressedansunpremierdispositifabassepression,puisconsolidesoushautepression,letoutsousvideJune2014ICNEM&T16Ref.http://www.techniques-ingenieur.fr/
June 2014 ICNEM&T 16 Condensation Ref. http://www.techniques-ingenieur.fr/ Liquid N2 Evaporation sources To pump Main vacuum chamber Gas inlet Scraper Funnel Low pressure unit High pressure unit Plunger Plunger Bellows Anvil Slider
Laser/materialinteractionZnaerosol deposited onglasssubstrateYAGlaser:2=1064nmVaporizationlaserHeliumTarget rodVaporization laserZHelium(10 atm)ZTarget:rotatingdiscSKU000006-1UCMEFCJune2014ICNEM&TRef.http://www.techniques-ingenieur.fr/
June 2014 ICNEM&T 17 Ref. http://www.techniques-ingenieur.fr/ Zn aerosol deposited on glass substrate YAG laser: l = 1064 nm Laser/material interaction Helium Target rod Vaporization laser Helium (10 atm) Target: rotating disc Vaporization laser
CdsquantumdotsynthesisCdsThermalGrowingProcessA-SinglesourceprecursorB-Microwavesynthetic route?methodologyCdsQuantumdots (QDs)(1)Cumberland,S.L.;Hanif,K.M;Javier,A.;Khitrov,G.A.;Strouse,G.F;Woessner,S.M.;Yun,C.S.Chem.Mater.2002,14,1576-1584.(2)Washington,AaronL,Strouse,G.F.ChemistryofMaterials2009,21,3586-3592.18June2014ICNEM&T
June 2014 ICNEM&T 18 CdS Thermal Growing Process A - Single source precursor methodology1 B - Microwave synthetic route2 CdS Quantum dots (QDs) (1) Cumberland, S. L.; Hanif, K. M.; Javier, A.; Khitrov, G. A.; Strouse, G. F.; Woessner, S. M.; Yun, C. S. Chem. Mater. 2002, 14, 1576-1584. (2) Washington, Aaron L.; Strouse, G. F. Chemistry of Materials 2009, 21, 3586-3592. CdS quantum dot synthesis
A-Single sourceprecursormethodologya. Synthesis of precursors via a two-step sol gel process3Firststep:SPCd4三[Cd4(SPh)10l(Me4N)2Cd(NO3)+SPh+EtN+Me4NCI→CdSPFPhsSecondstep:Cd10S4 = [Cd10S4(SPh)16](Me4N)4Cd+chalcogen (S)→Cd1oS4DhSPJune2014ICNEM&T19
June 2014 ICNEM&T 19 a. Synthesis of precursors via a two-step sol gel process3 First step: Cd4 ≡ [Cd4 (SPh)10](Me4N)2 Cd(NO3 )2 + SPh + Et3N + Me4NCl → Cd4 Second step: Cd10S4 ≡ [Cd10S4 (SPh)16](Me4N)4 Cd4 + chalcogen (S) → Cd10S4 A - Single source precursor methodology 2 - 4 -
A-Singlesourceprecursormethodology330b.Thermalgrowth5oosTemperatureramp:2'C/min300ebaidue270oee08oe240Zae208ropeeee210N2gasflow'spoio0101808150N,gasflowStepuration:7min120020406080100120140Time (min)oilbathExtractionat differentCadmium sulfidequantum dotstemperaturesCdsmagneticstirrerJune(5)M.Fregnaux,D.Arl,S.Dalmasso,J.J.GaumetandJ.-P.Laurenti,Phys.Chem.C2010114(41),731820
June 2014 ICNEM&T 20 b. Thermal growth5 N2 gas flow N2 gas flow oil bath magnetic stirrer 4 - Precursor Cd10S4 Hexadecylamine (HDA) [m. p. : 47°C] heating Cadmium sulfide quantum dots Extraction at different temperatures (5) M. Fregnaux, D. Arl, S. Dalmasso, J.-J. Gaumet and J.-P. Laurenti, J. Phys. Chem. C 2010 114 (41), 7318 . A - Single source precursor methodology