EGS>Crystalline Silicon Seed Czochralski(CZ)method Single Crystal Silicon Much more common Quartz Crucible Water Cooled Chamber Large diameter silicon crystals Heat Shield Carbon Heater Impurities from the crucible (oxygen and Graphite Crucible carbon)incorporated(O:strengthen silicon Crucible Support Spill Tray crystal and gettering heavy metal impurities) Electrode Float-Zone (FZ)method No crucible is used(low oxygen impurity Polysilicon Ingot level) High resistivity silicon wafer(small fraction) RF Coil Difficult to scale up the crystal diameter due to stability problems Single Crystal Si
EGS Æ Crystalline Silicon Czochralski (CZ) method Seed Single Crystal Silicon • Much more common • Large diameter silicon crystals • Impurities from the crucible (oxygen and Quartz Crucible Water Cooled Chamber Heat Shield Carbon Heater • Impurities from the crucible (oxygen and carbon) incorporated (O: strengthen silicon crystal and gettering heavy metal impurities) Graphite Crucible Crucible Support Spill Tray Electrode Float-Zone (FZ) method • No crucible is used (low oxygen impurity level) • High resistivity silicon wafer (small fraction) Polysilicon Ingot High resistivity silicon wafer (small fraction) RF C il • Difficult to scale up the crystal diameter due to stability problems RF Coil Single Crystal Si
Silicon Wafer Fabrication Grind crystal to a diameter(200mm),850um thick Grind flats(the primary and secondary) Quart eeo crucible with polyslllcon chargo 壁0 Saw 1 Crystal Pulled crystal (sawing ingot into wafers) Crystal growth (shaping of Ingot) furnace C 00m, Edge grind (edge smoothing） Lapper Etch of wafers Polish (flatness) (high gloss finish) Wafers Clean bench Laser Inspect (particle/metal removal) (LP) ship
Silicon Wafer Fabrication Grind crystal to a diameter (200mm),850µm thick Grind flats ( p y y) the primar y and secondary)