Phase Change Memory Aware Data Management and Application

Phase Change memory aware data Management and Application Jiangtao Wang

Phase Change Memory Aware Data Management and Application Jiangtao Wang

Outline Introduction Integrating PCm into the memory hierarchy PCM for main memory PCM for auxiliary memory Conclusion

Outline • Introduction • Integrating PCM into the Memory Hierarchy − PCM for main memory − PCM for auxiliary memory • Conclusion

Phase change memory an emerging memory technology Memory(draM) Read/write speeds and Byte-addressable Lower ldle power Storage SSD HDD Non-volatile high capacity(high density

Phase change memory •An emerging memory technology •Memory(DRAM) −Read/write speeds and Byte-addressable −Lower Idle power •Storage(SSD & HDD) −Non-volatile −high capacity (high density)

Phase change memory DRAM PCM NAND Flash Page size 64B 64B 2KB Page read latency 20-50ns SoNs 25us Page write latency 20-50ns 1us w500us Endurance 106-108 10410 Idle power 100mW/GB 1mW/GB 1-10mW/GB Density 1x 2-4x 4x cons: Asymmetry read /write latency Limited write endurance

DRAM PCM NAND Flash Page size 64B 64B 2KB Page read latency 20-50ns ~50ns ~25us Page write latency 20-50ns ~1us ~500us Endurance ∞ 106 -108 104 -105 Idle power ~100mW/GB ~1mW/GB 1-10mW/GB Density 1x 2-4x 4x Phase change memory •Cons: −Asymmetry read/write latency −Limited write endurance

Phase change memory Read operation 10ns o 100ns 1us 10L 00us 1ms 10ms Write operation

Phase change memory Read operation 10ns 100ns 1us 10us 100us 1ms 10ms Write operation DRAM PCM FLASH HDD DRAM PCM FLASH HDD