Doping and diffusion I Motivation Faster MOSFET requires Requires shallower source, drain Ar P* poly snorter channel

Microelectronics letters journals IEEE Electron Device letters Applied physics Letters Available online at libraries mit edu Click on vera (Virtual Electronic Resource Access)

Review of process Structures to be tested Sheet resistance MOS Capacitor Fall 2003-MA schmidt

Why spend a whole lecture on oxidation of Si? Ge has high ue, Wh, Ge stable but no oxide GaAs has high ue and direct band Why sio? Sio, is stable down to 10 9 Torr. T>900C Sio can be etched with hf which leaves si unaffected

Processes: gift of Slo2-Expose Si to steam = uniform insulating layer or metal film growth: high vacuum, single element Contrast with CVD: toxic, corrosive gas flowing through valves

What does Materials Science have to do with Microelectronic Processing? Need to understand DIfferences: metals, oxides and semiconductors Atomic bonding Oxidation rates

What does Materials Science have to do with Microelectronic Processing? Need to understand DIfferences: metals, oxides and semiconductors Atomic bonding Oxidation rates, compound formation(GaAs)

第一章激光概述 为使读者对激光及其应用有一正确概念,首先概括地介绍一些有关的基本事项。 1-1激光束的特征 一、普通光源的光 来自某光源的光是从构成该光源的为数极多的原子或分子发射的光波合成的。各个原子从能量较高状态即激发态跃迁到能量较低的状态时,将能量差以光的形式放出来(图1.1)

第一节数据交换的必要性 第二节利用公用网进行数据交换 第三节电路交换方式 第四节报文交换方式 第五节分组交换方式 第六节交换方式的选择与比较退出

第一节物理层接口 第二节数据传输控制规程 第三节传输控制规程比较