DesignManifesto&&DatastructureofIPLDesign Manifesto (Memory Hierarchy = RAM + NAND ).1TakeadvantagesofFlashmemoryand→Accesscharacters(uniformsequential/randomaccessfasterread)111熱1-Overcometheerase-before-writelimitation>Avoidwritelerase1111唇-MinimizethechangesmadetoDBMS architectureChangeslimitedtobuffermanageandstoragemanageonly1111111111
Design Manifesto && Data structure of IPL ▪ Design Manifesto (Memory Hierarchy = RAM + NAND ) Take advantages of Flash memory → Access characters (uniform sequential/random access and faster read ) Overcome the erase-before-write limitation → Avoid write/erase Minimize the changes made to DBMS architecture → Changes limited to buffer manage and storage manage only
吉祥Data Structure of IPL1.EraseUnit =15Page-basis + 1 log area0132福2.Structure of Buffer and Flash Memory秘麺update-in-placein-memoryDatabase-data pageBufferin-memory(8K)logsector(512B)FlashMemory15datapagesphysical block(eraseunit):128klog region (8K):16 sectors
▪ Data Structure of IPL 1. EraseUnit =15Page-basis + 1 log area 2.Structure of Buffer and Flash Memory 0 1 2 3