PERE Typical thyristor gate triggering circuit +E +E, TM VD R R R Input from R control circuit
Power Electron cs i 6 Typical thyristor gate triggering circuit Typical thyristor gate triggering circuit TM R1 R 2 R 3 V1 V 2 VD1 VD3 VD 2 R 4 +E1 +E 2 Input from control circuit
PERE Typical gate signal and gate drive circuit for GTo l VD GTO VD V, L V 75my少y 50kHz CCV R N3 R 7
Power Electron cs i 7 Typical gate signal and gate drive circuit Typical gate signal and gate drive circuit for GTO for GTO O t t O u G i G 50kHz 50V GTO N1 N2 N3 C1 C3 C4 C2 R1 R2 R3 R4 V1 V3 V2 L VD1 VD2 VD3 VD4
a typical gate drive circuit for IGBT based on an integrated driver chip 4 V 平42 Detection Fast recovery diode cIrcuit 1 Sensing t≤0.2 Timer and reset circuit A\ 30V 3.l92 M57962L +15V 100HR 太 Turn-off eRror indicating 100uR 6L 10V M57962L integrated driver chip
Power Electron cs i 8 A typical gate drive circuit for IGBT based on A typical gate drive circuit for IGBT based on an integrated driver chip an integrated driver chip 13 Err o r in dicatin g Sensing VCC Interface circuit Turn-off circuit Ti mer an d reset circuit Detectio n circuit 4 1 5 8 6 14 13 uo VEE 8 1 5 4 6 -10 V +15 V 30 V +5 V M 57962 L 14 ui 1 Fast recovery diode t rr≤ 0. 2 µs 4.7kΩ 3.1Ω 100 µ F 100 µ F M57962L integrated driver chip M57962L integrated driver chip